Current-writing active-matrix circuit for organic light-emitting diode display using a-Si:H thin-film-transistors

被引：0

作者：

Hattori, R ^{[1
]}

Tsukamizu, T

Tsuchiya, R

Miyake, K

He, Y

Kanicki, J

机构：

[1] Kyushu Univ, Grad Sch Informat Sci & Elect Engn, Dept Elect, Fukuoka 8128581, Japan

[2] Univ Michigan, Dept Elect Engn & Comp Sci, Elect Mfg Lab, Ctr Integrated Microsyst, Ann Arbor, MI 48109 USA

来源：

IEICE TRANSACTIONS ON ELECTRONICS | 2000年 / E83C卷 / 05期

关键词：

hydrogenated amorphous silicon; thin-film-transistor; active-matrix; organic light-emitting diode; bias temperature-stress;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we describe a four thin-film-transistor (TFT) pixel circuit based on hydrogenated amorphous silicon (a-Si:N) technology, for the active-matrix organic light-emitting diode (AMOLED) display applications. The circuit uses current-writing mechanism and can automatically adjust the threshold-voltage shifts of both thc organic light-emitting diodes (OLEDs) and the TFTs induced by the circuit aging or process variations. Experimental results indicate virtually no variation of the output driving current after long-term bias-temperature-stress (BTS).

引用

页码：779 / 782

页数：4

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