On the Dynamic characteristics of Ferroelectric and Paraelectric FETs

被引：0

作者：

Kumar, Ashwani ^{[1
]}

De Souza, M. M. ^{[1
]}

机构：

[1] Univ Sheffield, EEE Dept, Sheffield, S Yorkshire, England

来源：

2018 IEEE 2ND ELECTRON DEVICES TECHNOLOGY AND MANUFACTURING CONFERENCE (EDTM 2018) | 2018年

关键词：

Dynamic Behavior; Ferroelectric; Paraelectric; FET;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We derive the necessary conditions for a steep subthreshold switching of a Paraelectric FET with gate scan frequency. Despite an absence of a two valley energy profile, paraelectric FETs can be represented by a series R-C circuit that exhibit sub-60 mV/dec switching under dynamic conditions during the reverse sweep of the gate bias.

引用

页码：184 / 186

页数：3

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