Simultaneous optimization of supply and threshold voltages for low-power and high-performance circuits in the leakage dominant era

被引：28

作者：

Basu, A ^{[1
]}

Lin, SC ^{[1
]}

Wason, V ^{[1
]}

Mehrotra, A ^{[1
]}

Banerjee, K ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93117 USA

来源：

41ST DESIGN AUTOMATION CONFERENCE, PROCEEDINGS 2004 | 2004年

关键词：

performance; design; electrothermal couplings; energy delay product; subthreshold leakage; temperature aware design;

D O I：

10.1145/996566.996801

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

Electrothermal couplings between supply voltage, operating frequency, power dissipation and die temperature have been shown to significantly impact the energy-delay-product (EDP) based simultaneous optimization of supply (V-dd) and threshold (V-th) voltages. We present for the first time, the implications of an electrothermally aware EDP optimization on circuit operation in leakage dominant nanometer scale CMOS technologies. It is demonstrated that electrothermal EDP (EEDP) optimization restricts the operation of the circuit to a certain region in the V-dd-V-th plane. Also, the significance of EEDP optimization has been shown to increase with increase in leakage power and/or process variations.

引用

页码：884 / 887

页数：4

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