STM and RHEED studies on low-temperature growth of GaAs(001)

被引：3

作者：

Nagashima, A ^{[1
]}

Tazima, M ^{[1
]}

Nishimura, A ^{[1
]}

Takagi, Y ^{[1
]}

Yoshino, J ^{[1
]}

机构：

[1] Tokyo Inst Technol, Grad Sch Sci & Engn, Dept Phys, Meguro Ku, Tokyo 1528551, Japan

来源：

SURFACE SCIENCE | 2002年 / 514卷 / 1-3期

基金：

日本学术振兴会;

关键词：

reflection high-energy electron diffraction (RHEED); scanning tunneling microscopy; molecular beam epitaxy; surface roughening; gallium arsenide;

D O I：

10.1016/S0039-6028(02)01652-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

By using scanning tunneling microscopy and reflection high-energy electron diffraction (RHEED), kinetics during the low temperature (LT) growth of GaAs as well as anomaly in RHEED intensity oscillation (RO) has been studied. At the intermediate temperature in the range of 300-500 degreesC, the growing surface roughens, while at the still LT, with decreasing the island size, the surface roughening settles down to some extent, which renders reentrant behavior of the RO. In the reentrant LT region, the RO shows temporal frequency shift. Dynamical calculations reproduce the observed features qualitatively, confirming that the anomaly is largely concerned with the multilayered morphology evolved during the growth. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：350 / 355

页数：6

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