Characteristics Improvement of Silicon Nanowire Field Effect Transistor by using High-K Oxide Engineering

the structure of 3-dimensional (3D) nanowire MUGFET is proposed. The simulation results are based on the study of electrical parameters such as electrical potential, charge density, electric field, IV characteristics, transconductance and tool used is the nanohub multiple gate field effect transistors (MUGFET) simulator. The studies are done to cross check the performance of NANOWIRE MUGFETs on the basis of different insulating layer (oxide layer). The results show that the nanowire with Hafnium dioxide as the oxide layer gives a better performance as compared with Silicon dioxide as the oxide layer.