Analytical formula for temperature dependence of resistivity in p-type 4H-SiC with wide-range doping concentrations

被引：8

作者：

Asada, Satoshi ^{[1
]}

Suda, Jun ^{[1
]}

Kimoto, Tsunenobu ^{[1
]}

机构：

[1] Kyoto Univ, Dept Elect Sci & Engn, Kyoto 6158510, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2018年 / 57卷 / 08期

基金：

日本学术振兴会;

关键词：

SIC DEVICES; MOBILITY; SILICON; ACCEPTOR; DENSITY;

D O I：

10.7567/JJAP.57.088002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Temperature dependence of resistivity from 250 to 900K in p-type 4H-SiC with various doping concentrations (5.8 x 10(14)-7.1 x 10(18)cm(-3)) was presented. The resistivity was obtained by the van der Pauw method in samples, whose doping concentrations were precisely determined in our previous work. From the experimental results, coefficients for a fitting formula with polynomial approximation were derived. We confirmed that the fitting formula can accurately estimate the resistivity of p-type SiC with wide-range doping concentrations. (C) 2018 The Japan Society of Applied Physics

引用

页数：4

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