Effect of Co permeation on spin polarized transport in a Co/organic semiconductor (OSC) structure

被引：8

作者：

Zhang, Yubin ^{[1
]}

Ren, Junfeng ^{[2
]}

Lei, Jie ^{[1
]}

Xie, Shijie ^{[1
,3
]}

机构：

[1] Shandong Univ, Sch Phys, Jinan 250100, Peoples R China

[2] Shandong Normal Univ, Coll Phys & Elect, Jinan 250014, Peoples R China

[3] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

ORGANIC ELECTRONICS | 2009年 / 10卷 / 04期

关键词：

Organic spintronics; Magnetic doped interface; Spin injection and transport; LIGHT-EMITTING-DIODES; INJECTION; ELECTRODES; DIFFUSION; POLYMERS; FILMS; METAL;

D O I：

10.1016/j.orgel.2009.02.005

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Co atoms will permeate into the soft organic material to form a magnetic permeated sub-layer (MPS) during the fabrication of an organic spin device, such as Co/OSC/LSMO. We considered the OSC as a two-sublayer structure of MPS and pristine OSC, and then established a dynamic spin-diffusion equation to study the effect of MPS on the spin current polarization and the magnetoresistance of the device. It was found that the MPS will change the spin transport due to its different spin-flip time and mobility from that in the pristine OSC. The splitting of spin-flip times will be favorable to the spin polarization transport. Mobility of spin polarons in the MPS will be reduced due to the scattering of the Co atoms, which will weaken the spin polarization. For a given device, effect of the thickness of the MPS on the spin polarization is discussed. Finally, we calculated the magnetoresistance of a Co/OSC/LSMO device. A theoretical result which is consistent with the experimental data was obtained. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：568 / 572

页数：5

共 30 条

[1] Physics of organic electronic devices [J].

Campbell, IH ;

Smith, DL .

SOLID STATE PHYSICS: ADVANCES IN RESEARCH AND APPLICATIONS, VOL 55, 2001, 55 :1-117

[2] Failure phenomena and mechanisms of polymeric light-emitting diodes: Indium-tin-oxide-damage [J].

Chao, CI ;

Chuang, KR ;

Chen, SA .

APPLIED PHYSICS LETTERS, 1996, 69 (19) :2894-2896

[3] Room temperature spin polarized injection in organic semiconductor [J].

Dediu, V ;

Murgia, M ;

Matacotta, FC ;

Taliani, C ;

Barbanera, S .

SOLID STATE COMMUNICATIONS, 2002, 122 (3-4) :181-184

[4] Electroluminescence in conjugated polymers [J].

Friend, RH ;

Gymer, RW ;

Holmes, AB ;

Burroughes, JH ;

Marks, RN ;

Taliani, C ;

Bradley, DDC ;

Dos Santos, DA ;

Brédas, JL ;

Lögdlund, M ;

Salaneck, WR .

NATURE, 1999, 397 (6715) :121-128

[5] TUNNELING BETWEEN FERROMAGNETIC-FILMS [J].

JULLIERE, M .

PHYSICS LETTERS A, 1975, 54 (03) :225-226

[6] Ferromagnetic versus antiferromagnetic interaction in Co-doped ZnO [J].

Lee, EC ;

Chang, KJ .

PHYSICAL REVIEW B, 2004, 69 (08)

[7] Metal diffusion from electrodes in organic light-emitting diodes [J].

Lee, ST ;

Gao, ZQ ;

Hung, LS .

APPLIED PHYSICS LETTERS, 1999, 75 (10) :1404-1406

[8]

LIU Y, ARXIV08100289

[9] Application of regioregular polythiophene in spintronic devices:: Effect of interface [J].

Majumdar, Sayani ;

Laiho, R. ;

Laukkanen, P. ;

Vayrynen, I. J. ;

Majumdar, Himadri S. ;

Osterbacka, R. .

APPLIED PHYSICS LETTERS, 2006, 89 (12)

[10] Focusing of spin polarization in semiconductors by inhomogeneous doping [J].

Pershin, YV ;

Privman, V .

PHYSICAL REVIEW LETTERS, 2003, 90 (25) :4

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