Epitaxial growth of gadolinium oxide on roll-textured nickel using a solution growth technique

被引:25
作者
Morrell, JS
Xue, ZB
Specht, ED
Goyal, A
Martin, PM
Lee, DF
Feenstra, R
Verebelyi, DT
Christen, DK
Chirayil, TG
Paranthaman, M
Vallet, CE
Beach, DB [1 ]
机构
[1] Oak Ridge Natl Lab, Div Chem & Analyt Sci, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[3] Oak Ridge Natl Lab, Div Met & Ceram, Oak Ridge, TN 37831 USA
[4] Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA
基金
美国能源部;
关键词
D O I
10.1557/JMR.2000.0092
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Chemical solution epitaxy was used to deposit an epitaxial film of Gd2O3 on roll-textured nickel. A 2-methoxyethanol solution of gadolinium methoxyethoxide was used for spin-coating and dip-coating. Films were crystallized using a heat treatment at 1160 degrees C for 1 h in 4% H-2/96% Ar. Single-layer films were approximately 600 Angstrom in thickness, and thicker films could be produced using multiple coatings. theta/2 theta x-ray diffractograms revealed only (0041) reflections, indicating a high degree of out-of-plane texture. A pole-figure about the Gd2O3 (222) reflection indicated a single in-plane epitaxy. Scanning electron microscopy showed that the films were smooth, continuous, and free of pin holes. Atomic force microscopy revealed an average surface roughness of 53 Angstrom. Electron diffraction indicated that the misalignment of the majority of the grains in the plane was less than 10 degrees. High-current (0.4 MA/cm(2)) YBa2Cu3O7-delta films were grown on roll-textured nickel substrates using Gd2O3 as the base layer in a three-layer buffer structure.
引用
收藏
页码:621 / 628
页数:8
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