Enlargement of the diamond deposition area in combustion flame method by traversing substrate

被引：10

作者：

Ando, Y ^{[1
]}

Tobe, S

Saito, T

Sakurai, JI

Tahara, H

Yoshikawa, T

机构：

[1] Ashikaga Inst Technol, Fac Engn, Ashikaga, Tochigi 3268558, Japan

[2] Osaka Univ, Grad Sch Engn Sci, Toyonaka, Osaka 5608531, Japan

来源：

THIN SOLID FILMS | 2004年 / 457卷 / 01期

关键词：

chemical vapor deposition; diamond; plasma processing and deposition; molybdenum;

D O I：

10.1016/j.tsf.2003.12.042

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, diamond deposition on traversing substrate was carried out in order to get useful information for utilizing combustion flame method. In the case of stationary substrate, diamond particles were obtained on the condition that C2H2/O-2 flow ratio was from 1.00 to 1.15, while no particles could be obtained in oxygen rich environment. However, in the case of traversing substrate, dense diamond belt was deposited without oxidizing of the diamond particles due to oxidative flame. From these results, it was proved that large area deposition by substrate traversing was available even in the case of combustion flame CVD. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：217 / 223

页数：7

共 10 条

[1]

FUKUMOTO M, 2003, J JPN THERM SPRAY SO, V40, P57

[2] THE SYNTHESIS OF HIGH-QUALITY DIAMOND IN COMBUSTION FLAMES [J].

HIROSE, Y ;

AMANUMA, S ;

KOMAKI, K .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) :6401-6405

[3] FLAME STRUCTURE AND DIAMOND GROWTH-MECHANISM OF ACETYLENE TORCH [J].

MATSUI, Y ;

YUUKI, A ;

SAHARA, M ;

HIROSE, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1989, 28 (09) :1718-1724

[4] DIAMOND DEPOSITION USING AN X-Y STAGE IN A DC PLASMA-JET CHEMICAL VAPOR-DEPOSITION [J].

MATSUMOTO, S ;

MANABE, Y ;

HIBINO, Y .

JOURNAL OF MATERIALS SCIENCE, 1992, 27 (21) :5905-5910

[5] SYNTHESIS OF DIAMOND FILMS IN A RF INDUCTION THERMAL PLASMA [J].

MATSUMOTO, S ;

HINO, M ;

KOBAYASHI, T .

APPLIED PHYSICS LETTERS, 1987, 51 (10) :737-739

[6]

OHTAKE N, 1993, JPN J APPL PHYS, V5, P2067

[7] GROWTH STEPS AND ETCH PITS APPEARING ON (100) PLANES OF DIAMONDS PREPARED BY COMBUSTION-FLAME DEPOSITION METHOD [J].

OKADA, K ;

KOMATSU, S ;

MATSUMOTO, S ;

MORIYOSHI, Y .

JOURNAL OF CRYSTAL GROWTH, 1991, 108 (1-2) :416-420

[8] High-rate deposition of YBa2Cu3O7-x films by hot cluster epitaxy [J].

Takamura, Y ;

Yamaguchi, N ;

Terashima, K ;

Yoshida, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (09) :5084-5088

[9]

TAKEDA K, 1980, 6 INT C GAS DISCH TH

[10] MULTIPLE FLAME DEPOSITION OF DIAMOND FILMS [J].

TZENG, Y ;

PHILLIPS, R ;

CUTSHAW, C ;

SRIVINYUNON, T ;

LOO, BH ;

WANG, P .

APPLIED PHYSICS LETTERS, 1991, 58 (23) :2645-2647

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