Structural and optical properties of ε-phase tris(8-hydroxyquinoline) aluminum crystals prepared by using physical vapor deposition method

被引:15
|
作者
Xie, Wanfeng [1 ]
Pang, Zhiyong [1 ]
Zhao, Yu [1 ]
Jiang, Feng [1 ]
Yuan, Huimin [1 ]
Song, Hui [1 ]
Han, Shenghao [1 ,2 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Shandong Univ, Sch Space Sci & Phys, Weihai 264209, Peoples R China
关键词
Crystal morphology; Physical vapor deposition processes; Organic compounds; Semiconducting materials; GIANT MAGNETORESISTANCE; PHOTOLUMINESCENCE; EFFICIENCY; TRANSPORT; EXCITONS; GROWTH;
D O I
10.1016/j.jcrysgro.2014.07.031
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Crystals of epsilon-phase tris(8-hydroxyquinoline) aluminum (epsilon-Alq(3)) were prepared by using physical vapor deposition (PVD) method in a double zone tube furnace. The structural properties of the epsilon-Alq(3) crystals were investigated by using an X-ray single crystal diffractometer (XSCD) and a high resolution scanning electron microscope (SEM). Large straight steps were observed from the side face of the pine needle-like crystals. The straight steps are parallel with each other like terraces and the widths of the steps are fixed, indicating that the epsilon-Alq(3) crystals may have layered structures. The photoluminescence (PL) spectra at different temperatures (7 K, 66 K, 220 K, 300 K and 350 K) and the absorption spectrum were also investigated. The optical band gap of the epsilon-Alq(3) crystals was calculated to be about 2.82 eV. This value is a little larger than that of amorphous mer-Alq(3) (about 2.7 eV), indicating a minimizing of impurities, grain boundaries and defects. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:164 / 167
页数:4
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