Mid-Infrared Sensing Using Heavily Doped Germanium Plasmonics on Silicon Substrates

被引：0

作者：

Baldassarre, L. ^{[1
]}

Sakat, E. ^{[2
]}

Frigerio, J. ^{[3
]}

Frigerio, J. B. J. ^{[2
]}

Samarelli, A. ^{[4
]}

Giliberti, V ^{[3
]}

Pellegrini, G. ^{[2
]}

Gallacher, K. ^{[4
]}

Fischer, M. ^{[5
,6
]}

Brida, D. ^{[5
,6
]}

Isella, G. ^{[3
]}

Biagioni, P. ^{[2
]}

Paul, D. J. ^{[4
]}

Ortolani, M. ^{[1
]}

机构：

[1] Ist Italiano Tecnol, Ctr Life NanoSci Sapienza, Viale Regina Elena 291, I-00161 Rome, Italy

[2] Politecn Milan, Dipartimento Fis, Piazza Leonardo da Vinci 32, I-20133 Milan, Italy

[3] Politecn Milan, Dipartimento Fis, L NESS, Polo Terr Como, Via Anzani 42, I-22100 Como, Italy

[4] Univ Glasgow, Sch Engn, Rankine Bldg,Oakfield Ave, Glasgow G12 8LT, Lanark, Scotland

[5] Univ Konstanz, Dept Phys, D-78457 Constance, Germany

[6] Univ Konstanz, Ctr Appl Photon, D-78457 Constance, Germany

来源：

SIGE, GE, AND RELATED MATERIALS: MATERIALS, PROCESSING, AND DEVICES 7 | 2016年 / 75卷 / 08期

关键词：

SI; FABRICATION; ANTENNAS;

D O I：

10.1149/07508.0247ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Heavily-doped semiconductor films are very promising to produce mid-infrared plasmonic devices for a wide range of sensing applications because the real part of the dielectric function of the film is negative and broadly tunable in this wavelength range. In this work, we investigate, n-type doped Ge epilayers grown on Si substrates. We design and realize Ge nano-antennas on Si substrates demonstrating the presence of localized plasmon resonances, and exploit these resonances for molecular sensing in the mid-infrared.

引用

页码：247 / 251

页数：5

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