A CMOS Micromachined Capacitive Tactile Sensor with Compensation of Process Variations

被引：0
作者：
Tsai, Hao-Cheng [1 ]
Wu, Tien-Keng [1 ]
Tsai, Tsung-Heng [1 ]
机构：
[1] Natl Chung Cheng Univ, Adv Inst Mfg Hightech Innovat, Dept Elect Engn, Chiayi, Taiwan
来源：
2013 IEEE BIOMEDICAL CIRCUITS AND SYSTEMS CONFERENCE (BIOCAS) | 2013年
关键词：
D O I：
暂无
中图分类号：
TP [自动化技术、计算机技术];
学科分类号：
0812 ;
摘要：
This paper presents a standard-CMOS-fabricated capacitive tactile sensor with high sensitivity and a sensing circuit with compensation of process variations. Both of the sensor and sensing circuit are fabricated on a single chip by a TSMC 0.35 mu m CMOS MEMS technology. In order to create high sensitivity of the sensor for sensing circuit, a T-shaped protrusion is proposed. This sensor is constituted by the metal layer and the dielectric layer without extra thin film deposition, and can be completed with few simple post-processing steps. With the fully differential correlated double sampling capacitor-to-voltage converter (CDS-CVC) and reference capacitor correction, process variations are compensated. The measured sensitivity of the sensing circuit is 18mV/fF.
引用
收藏
页码：342 / 345
页数：4
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