Increased Radiation Hardness in Ultra-Thin GaAs Single-Junction Solar Cells

被引：0

作者：

Becker, Jacob ^{[1
]}

Kuo, Ying-Shen

Zhang, Yong-Hang

机构：

[1] Arizona State Univ, Ctr Photon Innovat, Tempe, AZ 85287 USA

来源：

2014 IEEE 40TH PHOTOVOLTAIC SPECIALIST CONFERENCE (PVSC) | 2014年

关键词：

GaAs; Radiation Hardness; Solar Cell; Space Applications; Thin-Film; ELECTRON-IRRADIATION; DEGRADATION;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The absorber-thickness dependent, relative efficiency losses for solar cells with a 300 nm, 1000 nm and 2000 nm thick absorber were found to be 20.5%, 26.8% and 28.6%, respectively, after exposure to 1 MeV electron radiation. Thinner solar cells exhibited smaller efficiency losses than thicker devices; a trend that correlates well with the theoretical prediction using a semi-analytical model.

引用

页码：1839 / 1841

页数：3

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