Electrical and optical properties of ZnO:Al film prepared on polyethersulfone substrate by RF magnetron sputtering

被引：44

作者：

Lin, Y. C. ^{[1
]}

Chen, M. Z. ^{[1
]}

Kuo, C. C. ^{[1
]}

Yen, W. T. ^{[1
]}

机构：

[1] Natl Changhua Univ Educ, Dept Mechatron Engn, Changhua 50007, Taiwan

来源：

COLLOIDS AND SURFACES A-PHYSICOCHEMICAL AND ENGINEERING ASPECTS | 2009年 / 337卷 / 1-3期

关键词：

RF magnetron sputtering; Transparent conducting film; AZO thin film; Polyethersulfone; THIN-FILM; TEMPERATURE; DEPOSITION; STRESS;

D O I：

10.1016/j.colsurfa.2008.11.049

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This study investigates the process parameter effects on the electrical and optical properties of AZO (ZnO:Al) thin film using radio frequency (RF) magnetron sputtering on flexible PES (polyethersulfone) substrates. The process parameters include RF power, working pressure and substrate bias. Results show that RF power was increased to promote the crystalline quality and decrease AZO thin film resistivity. However, when the RF power was increased to 200W the AZO thin film crystalline quality and conductivity became worse. Along with the working pressure increase, regarding the AZO thin film crystalline quality, conductivity and transmittance has the promotion. Substrate bias added has not help to increases crystalline quality, electrical and optical properties of film. At a 150W RF power, 670 MPa working pressure and substrate bias 0V, the AZO thin film with a better electrical resistivity of 1.51 X 10(-2) Omega cm and an average optical transmittance of above 90% in the visible region is obtained. (c) 2008 Elsevier B.V. All rights reserved.

引用

页码：52 / 56

页数：5

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