Influence of reactant concentration on optical properties of ZnO nanoparticles

被引:12
作者
Dagher, S. [1 ]
Ayesh, A. I. [2 ]
Tit, N. [2 ]
Haik, Y. [1 ,3 ]
机构
[1] United Arab Emirates Univ, Dept Mech Engn, Al Ain, U Arab Emirates
[2] United Arab Emirates Univ, Dept Phys, Al Ain, U Arab Emirates
[3] Univ N Carolina, Greensboro, NC 27412 USA
关键词
ZnO; Nanoparticles; Optical properties; Absorption and emission spectra; ZINC-OXIDE; QUANTUM DOTS; DRUG-DELIVERY; PHOTOLUMINESCENCE; EMISSION; GROWTH; NANORODS; NANOTETRAPODS; DEPENDENCE; CENTERS;
D O I
10.1179/1753555713Y.0000000100
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Zinc oxide (ZnO) nanoparticles have been prepared by wet chemical method from zinc acetate. Particle size was controlled by adjusting the reactant concentration. The size of nanoparticles was investigated using ultraviolet-visible absorption spectra and photoluminescence spectra. The present nanoparticles exhibit non-linear optical behaviour with blue shift of the wavelengths as the particle size decreases. Furthermore, yellow emission is observed in ambient air while it disappears in the presence of nitrogen gas and gets substituted by blue violet emissions. While the blue violet emissions are familiar and likely to be attributed to electronic transitions from localised states (e.g. shallow donor states on Zn interstitials 'Zn-i') or the conduction band edge to the valence band, the yellow emission in the absence of nitrogen remains unclear. Our results of the present investigation suggest that the bubbling with nitrogen should fill the oxygen vacancies, substitute the oxygen interstitials, passivate the dangling bonds and introduce shallow acceptor states, which allow electronic transitions with shorter wavelengths (i.e. blue violet emissions). In the absence of nitrogen, surface defects such as oxygen interstitials and Zn(OH)(2) and possibly other point defects become again active and induce deep acceptor states of similar to 1 eV above the valence band edge, which allow electronic transitions of longer wavelength (i.e. yellow emission). Our results are compared to several available experimental data and first principle calculations in order to support our claims and conclusions.
引用
收藏
页码:76 / 82
页数:7
相关论文
共 49 条
[1]  
[Anonymous], 1998, PHOSPHOR HDB
[2]  
Berger L I, 1997, SEMICONDUCTOR MAT
[4]   Temperature-dependent shifts of three emission bands for ZnO nanoneedle arrays [J].
Cao, BQ ;
Cai, WP ;
Zeng, HB .
APPLIED PHYSICS LETTERS, 2006, 88 (16)
[5]   Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].
Carcia, PF ;
McLean, RS ;
Reilly, MH ;
Nunes, G .
APPLIED PHYSICS LETTERS, 2003, 82 (07) :1117-1119
[6]   THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS [J].
CHADI, DJ ;
CHANG, KJ .
PHYSICAL REVIEW LETTERS, 1988, 61 (07) :873-876
[7]   Photonic antioxidant ZnS(Cd) nanorod synthesis for drug carrier and bioimaging [J].
Chandrasekaran, S. ;
Misra, R. D. K. .
MATERIALS TECHNOLOGY, 2013, 28 (04) :228-233
[8]   Synthesis of ZnO/polystyrene composites particles by Pickering emulsion polymerization [J].
Chen, Jui Hung ;
Cheng, Chu-Yun ;
Chiu, Wen-Yen ;
Lee, Chia-Fen ;
Liang, Nai-Yun .
EUROPEAN POLYMER JOURNAL, 2008, 44 (10) :3271-3279
[9]   Defect emissions in ZnO nanostructures [J].
Djurisic, A. B. ;
Leung, Y. H. ;
Tam, K. H. ;
Hsu, Y. F. ;
Ding, L. ;
Ge, W. K. ;
Zhong, Y. C. ;
Wong, K. S. ;
Chan, W. K. ;
Tam, H. L. ;
Cheah, K. W. ;
Kwok, W. M. ;
Phillips, D. L. .
NANOTECHNOLOGY, 2007, 18 (09)
[10]   Green, yellow, and orange defect emission from ZnO nanostructures: Influence of excitation wavelength [J].
Djurisic, AB ;
Leung, YH ;
Tam, KH ;
Ding, L ;
Ge, WK ;
Chen, HY ;
Gwo, S .
APPLIED PHYSICS LETTERS, 2006, 88 (10)