Microstructural analysis of 9.7% efficient Cu2ZnSnSe4 thin film solar cells

被引：22

作者：

Buffiere, M. ^{[1
,2
]}

Brammertz, G. ^{[3
,4
]}

Batuk, M. ^{[5
]}

Verbist, C. ^{[5
]}

Mangin, D. ^{[6
]}

Koble, C. ^{[7
]}

Hadermann, J. ^{[5
]}

Meuris, M. ^{[3
,4
]}

Poortmans, J. ^{[1
,2
,4
]}

机构：

[1] Katholieke Univ Leuven, Dept Elect Engn ESAT, B-3001 Heverlee, Belgium

[2] Imec Partner Solliance, B-3001 Leuven, Belgium

[3] Imec Div IMOMEC Partner Solliance, B-3590 Diepenbeek, Belgium

[4] Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium

[5] Univ Antwerp, Electron Microscopy Mat Sci EMAT, B-2020 Antwerp, Belgium

[6] Univ Lorraine, Inst Jean Lamour, F-54011 Nancy, France

[7] Helmholtz Zentrum Berlin Mat & Energie GmbH, D-14109 Berlin, Germany

来源：

APPLIED PHYSICS LETTERS | 2014年 / 105卷 / 18期

关键词：

OPTICAL-PROPERTIES; BACK CONTACT; MODULES;

D O I：

10.1063/1.4901401

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents a detailed analysis of the microstructure and the composition of our record Cu2ZnSnSe4 (CZTSe)-CdS-ZnO solar cell with a total area efficiency of 9.7%. The average composition of the CZTSe crystallites is Cu1.94Zn1.12Sn0.95Se3.99. Large crystals of ZnSe secondary phase (up to 400 nm diameter) are observed at the voids between the absorber and the back contact, while smaller ZnSe domains are segregated at the grain boundaries and close to the surface of the CZTSe grains. An underlying layer and some particles of CuxSe are observed at the Mo-MoSe2-Cu2ZnSnSe4 interface. The free surface of the voids at the back interface is covered by an amorphous layer containing Cu, S, O, and C, while the presence of Cd, Na, and K is also observed in this region. (C) 2014 AIP Publishing LLC.

引用

页数：5

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