Band gap widening and d0 ferromagnetism in epitaxial Li-doped Sno2 films

被引:31
作者
Wang, Jianchun [1 ]
Zhou, Wei [1 ]
Wu, Ping [1 ]
机构
[1] Tianjin Univ, Dept Appl Phys, Tianjin Key Lab Low Dimens Mat Phys & Preparing T, Inst Adv Mat Phys,Fac Sci, Tianjin 300072, Peoples R China
基金
中国国家自然科学基金;
关键词
SnO2; films; Band gap widening; d(0) Ferromagnetism; Holes; TEMPERATURE; VACANCY;
D O I
10.1016/j.apsusc.2014.06.144
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Epitaxial grown Li doped SnO2 films with room temperature d(0) ferromagnetism were prepared by radio frequency magnetron sputtering. X-ray diffraction and X-ray photoelectron spectroscopy give clear evidence of Li presence at both substitutional and interstitial sites. A conversion of conductivity from n-type to p-type was observed as the Li concentration reaches 6 at.%. The band gap of films increased non-montonically with the Li concentration. All the films are ferromagnetic, and the largest saturation magnetization of 7.9 emu/cm(3) is observed in the Sn0.88Li0.12O2 film which has the widest band gap. The consistency of the variation between the magnetic, structural, electrical and optical properties indicates that holes introduced by Li substitutions can enhance the ferromagnetism though p-p interaction. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:188 / 192
页数:5
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