Large external ΔT and cooling power densities in thin-film Bi2Te3-superlattice thermoelectric cooling devices

被引:62
作者
Bulman, G. E. [1 ]
Siivola, E. [1 ]
Shen, B. [1 ]
Venkatasubramanian, R. [1 ]
机构
[1] RTI Int, Ctr Thermoelect Res, Res Triangle Pk, NC 27709 USA
关键词
D O I
10.1063/1.2353805
中图分类号
O59 [应用物理学];
学科分类号
摘要
Experimental I-V-T-c-Delta T data of thin-film superlattice thermoelectric modules is used to determine the internal Delta T, cross-plane Seebeck coefficient, effective thermal interface resistance, device ZT, and Q(max). We demonstrate 55 K of external cooling at 300 K (T-cmin=244.8 K), with an estimated heat pumping capacity of 128 W/cm(2). The average ZT(300) for the best superlattice devices is 0.75, compared to 0.66 for a bulk BixSb2-xTe3/Bi2SexTe3-x device. Our model indicates a significantly higher internal Delta T occurs across the active thermoelectric element, which was verified using buried thermocouples. (c) 2006 American Institute of Physics.
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页数:3
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