High-power continuous-wave operation of InP-based InAs quantum-dot laser with dot-in-a-well structure and strain-modulating layer

被引：2

作者：

Jo, Byounggu ^{[1
,2
,3
]}

Lee, Cheul-Ro ^{[1
,2
]}

Kim, Jin Soo ^{[1
,2
]}

Han, Won Seok ^{[3
]}

Song, Jung Ho ^{[3
]}

Choi, Jang-Hee ^{[3
,4
]}

Ryou, Jae-Hyun ^{[5
,6
]}

Lee, Jin Hong ^{[7
]}

Leem, Jae-Young ^{[8
]}

机构：

[1] Chonbuk Natl Univ, Div Adv Mat Engn, Jeonju 561756, South Korea

[2] Chonbuk Natl Univ, Res Ctr Adv Mat Dev, Jeonju 561756, South Korea

[3] Elect & Telecommun Res Inst, IT Convergence & Components Lab, Taejon 305350, South Korea

[4] Gwangju Insititute Sci & Technol, Schoold Mechatron, Kwangju 500712, South Korea

[5] Univ Houston, Dept Mech Engn, Houston, TX 77204 USA

[6] Univ Houston, Texas Ctr Superconduct Univ Houston TcSUH, Houston, TX 77204 USA

[7] Korea Photon Technol Inst, Kwangju 500779, South Korea

[8] Inje Univ, Sch Nano Engn, Gimhae 621749, South Korea

来源：

LASER PHYSICS LETTERS | 2014年 / 11卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

InAs quantum dot; high-power laser diode; dot-in-a-well structure; strain-modulating layer; THRESHOLD CURRENT-DENSITY; EPITAXY;

D O I：

10.1088/1612-2011/11/11/115815

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report continuous-wave (CW) operation of an InAs/InGaAsP quantum-dot (QD) heterostructure laser diode (LD) with an output power of 1.1 W at room temperature. This is the first observation on the laser output over 1 W from InAs QD-LDs fabricated on InP substrates. Also, the high-power lasing emission was successfully achieved at up to 60 degrees C. The improvement in the lasing characteristics can be attributed to enhancement in modal gain of QD-LDs because of the increase in spatial carrier confinement around localized QD states by using a dot-in-a-well structure and a thin GaAs strain-modulating layer.

引用

页数：6

共 5 条

[1] Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots
Jo, Byounggu
Kim, Jin Soo
Ahn, Haeng Keun
Lee, Cheul-Ro
Choi, Jang Hee
Han, Won Seok
Song, Jung Ho
Oh, Dae Kon
Noh, Sam Kyu
Leem, Jae-Young
JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2013, 62 (09) : 1274 - 1279
[2] Influences of dot-in-a-well structure and GaAs insertion layer on InP-based InAs quantum dots
Byounggu Jo
Jin Soo Kim
Haeng Keun Ahn
Cheul-Ro Lee
Jang Hee Choi
Won Seok Han
Jung Ho Song
Dae Kon Oh
Sam Kyu Noh
Jae-Young Leem
Journal of the Korean Physical Society, 2013, 62 : 1274 - 1279
[3] High-temperature continuous-wave operation of directly grown InAs/GaAs quantum dot lasers on on-axis Si (001)
Kwoen, Jinkwan
Jang, Bongyong
Watanabe, Katsuyuki
Arakawa, Yasuhiko
OPTICS EXPRESS, 2019, 27 (03): : 2681 - 2688
[4] High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers
徐云
王永宾
张宇
宋国峰
陈良惠
Chinese Physics B, 2013, (09) : 443 - 445
[5] High power 2-μm room-temperature continuous-wave operation of GaSb-based strained quantum-well lasers
Xu Yun
Wang Yong-Bin
Zhang Yu
Song Guo-Feng
Chen Liang-Hui
CHINESE PHYSICS B, 2013, 22 (09)

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