Large area epitaxial germanane for electronic devices

被引：43

作者：

Amamou, Walid ^{[1
]}

Odenthal, Patrick M. ^{[2
]}

Bushong, Elizabeth J. ^{[3
]}

O'Hara, Dante J. ^{[1
]}

Luo, Yunqiu Kelly ^{[3
]}

van Baren, Jeremiah ^{[2
]}

Pinchuk, Igor ^{[3
]}

Wu, Yi ^{[2
]}

Ahmed, Adam S. ^{[3
]}

Katoch, Jyoti ^{[3
]}

Bockrath, Marc W. ^{[2
]}

Tom, Harry W. K. ^{[1
,2
]}

Goldberger, Joshua E. ^{[4
]}

Kawakami, Roland K. ^{[1
,2
,3
]}

机构：

[1] Univ Calif Riverside, Program Mat Sci & Engn, Riverside, CA 92521 USA

[2] Univ Calif Riverside, Dept Phys & Astron, Riverside, CA 92521 USA

[3] Ohio State Univ, Dept Phys, Columbus, OH 43210 USA

[4] Ohio State Univ, Dept Chem, Columbus, OH 43210 USA

来源：

2D MATERIALS | 2015年 / 2卷 / 03期

基金：

美国国家科学基金会;

关键词：

germanane; photoconductivity; epitaxy; CAGE2; FILMS; GRAPHENE; GROWTH; LAYER;

D O I：

10.1088/2053-1583/2/3/035012

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the synthesis and transfer of epitaxial germanane (GeH) onto arbitrary substrates by electrochemical delamination and investigate its optoelectronic properties. GeH films with thickness ranging from 1 to 600 nm(2-1000 layers) and areas up to similar to 1 cm(2) have been reliably transferred and characterized by photoluminescence, x-ray diffraction, and energy-dispersive x-ray spectroscopy. Wavelength dependent photoconductivity measurements on few-layer GeH exhibit an absorption edge and provide a sensitive characterization tool for ultrathin germanane materials. The transfer process also enables the possibility of integrating germanane into vertically stacked heterostructures.

引用

页数：8

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