Highly c-axis oriented, self-biased and low loss barium ferrite thin films by sol-gel method

被引：6

作者：

Chen, Daming ^{[1
,2
]}

Wang, Guijuan ^{[1
,2
]}

Chen, Zhuo ^{[1
,2
]}

Chen, Yong ^{[1
,2
]}

Li, Yuanxun ^{[3
]}

Liu, Yingli ^{[3
]}

机构：

[1] Hainan Univ, State Key Lab Marine Resource Utilizat South Chin, Haikou 570228, Peoples R China

[2] Hainan Univ, Coll Mat & Chem Engn, Haikou 570228, Peoples R China

[3] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Chengdu 610054, Peoples R China

来源：

MATERIALS LETTERS | 2017年 / 189卷

关键词：

Barium ferrite; Thin film; Sol-gel method; HEXAFERRITE FILMS; MICROWAVE APPLICATIONS; MAGNETIC-PROPERTIES; DEPOSITION;

D O I：

10.1016/j.matlet.2016.12.026

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Barium ferrite (BaM) thin films are deposited on Pt/TiO2/SiO2/Si wafers by sol-gel, and the orientation, self-biased property and millimeter wave loss were investigated. It is found that BaM has highly c-axis orientation, and the degree of texturing is as high as 0.97. Hysteresis loops reveal that saturated magnetization (4 pi M-S) is 4.1 kG, remanent magnetization is 94% of 4 pi M-S, and BaM offer high self-biased property. In addition, the ferromagnetic resonance (FMR) measurement indicated that this thin film yields an anisotropy field of 15.8 kOe, and a smallest FMR linewidth of 118 Oe at 50 GHz. These phenomenon mean that this BaM thin film is suitable for application in millimeter wave devices such as circulator, filter and phase shifters, etc. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：229 / 231

页数：3

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