Influence of the barrier composition in GaN/InχAl1-χN quantum wells properties

被引：2

作者：

Kriouche, N. ^{[1
]}

Watanabe, A. ^{[1
]}

Oda, O. ^{[1
]}

Egawa, T. ^{[1
]}

机构：

[1] Nagoya Inst Technol, Res Ctr Nanodevice & Syst, Showa Ku, Nagoya, Aichi 4668555, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2014年 / 390卷

关键词：

MOVPE; Quantum wells; Photoluminescence; InAIN; V-DEFECTS; LAYERS; GROWTH; GAN; ALN;

D O I：

10.1016/j.jcrysgro.2013.12.005

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

GaN/In chi Al1-xN quantum wells with varying In composition in the In,All N barrier and varying GaN well thickness were grown by metal-organic vapor phase epitaxy on a c-plane sapphire. The as-grown samples were characterized by high resolution X-ray diffraction to determinate the composition and the relaxation state. The surface was observed by atomic force microscopy and the photoluminescence was measured at low temperature. A competition between the confinement effect and electric held effect has been evidenced. Under a critical well thickness, the luminescence is blue-shifted with the decrease of the In composition while above this critical thickness, the opposite behavior is observed. (C) 2013 Elsevier By. All rights reserved.

引用

页码：51 / 55

页数：5

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