Comparative Studies on AlGaN/GaN MOS-HEMTs with Stacked La2O3/Al2O3 Dielectric Structures

被引：9

作者：

Liu, Han-Yin ^{[1
]}

Lee, Ching-Sung ^{[2
]}

Liao, Fu-Chen ^{[2
]}

Hsu, Wei-Chou ^{[1
]}

Chou, Bo-Yi ^{[1
]}

Tsai, Jung-Hui ^{[3
]}

Lee, Hsin-Yuan ^{[4
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 70101, Taiwan

[2] Feng Chia Univ, Dept Elect Engn, Taichung 40724, Taiwan

[3] Natl Kaohsiung Normal Univ, Dept Elect Engn, Kaohsiung 802, Taiwan

[4] Natl Chung Cheng Univ, Dept Elect Engn, Min Hsiung Township 621, Chia Yi County, Taiwan

来源：

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY | 2014年 / 3卷 / 08期

关键词：

SURFACE PASSIVATION; GATE; PERFORMANCE; MECHANISMS;

D O I：

10.1149/2.0091408jss

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This work provides comparative studies of AlGaN/GaN MOS-HEMT with the devised stacked La2O3/Al2O3 dielectric structure with respect to a conventional Schottky-gate HEMT and a reference La2O3-dielectric MOS-HEMT, which were all fabricated on the identical epitaxial layers. The La2O3/Al2O3 stacked dielectrics are formed by using RF magnetron sputter/H2O2 oxidization. Transmission electron microscopy (TEM), capacitance-voltage (C-V) measurement with different frequency, and low-frequency noise (LFN) analysis were used to study the interface and oxide quality. Comprehensive studies on electrical and thermal stability characteristics have been performed. Improved transconductance gain (g(m)), current drive, breakdown, and thermal stability at 300-480 K are achieved in the present MOS-HEMT design. (C) 2014 The Electrochemical Society. All rights reserved.

引用

页码：N115 / N119

页数：5

共 32 条

[1] ELECTRONIC-PROPERTIES OF TWO-DIMENSIONAL SYSTEMS [J].

ANDO, T ;

FOWLER, AB ;

STERN, F .

REVIEWS OF MODERN PHYSICS, 1982, 54 (02) :437-672

[2] Low Hysteresis Dispersion La2O3 AlGaN/GaN MOS-HEMTs [J].

Chiu, Hsien-Chin ;

Lin, Chao-Wei ;

Chen, Chao-Hung ;

Yang, Chih-Wei ;

Lin, Che-Kai ;

Fu, Jeffrey S. ;

Chang, Liann-Be ;

Lin, Ray-Ming ;

Hsueh, Kuang-Po .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2010, 157 (02) :H160-H164

[3] Comparative studies of AlGaN/GaN MOS-HEMTs with stacked gate dielectrics by the mixed thin film growth method [J].

Chou, Bo-Yi ;

Hsu, Wei-Chou ;

Lee, Ching-Sung ;

Liu, Han-Yin ;

Ho, Chiu-Sheng .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (07)

[4] Electronic surface and dielectric interface states on GaN and AlGaN [J].

Eller, Brianna S. ;

Yang, Jialing ;

Nemanich, Robert J. .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2013, 31 (05)

[5] Mechanisms of RF current collapse in AlGaN-GaN high electron mobility transistors [J].

Faqir, Mustapha ;

Verzellesi, Giovanni ;

Chini, Alessandro ;

Fantini, Fausto ;

Danesin, Francesca ;

Meneghesso, Gaudenzio ;

Zanoni, Enrico ;

Dua, Christian .

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2008, 8 (02) :240-247

[6]

Hove M V, 2013, IEEE T ELECTRON DEV, V60, P3071

[7] AlGaN/GaN Metal-Oxide-Semiconductor High-Electron Mobility Transistor With Liquid-Phase-Deposited Barium-Doped TiO2 as a Gate Dielectric [J].

Hu, Chih-Chun ;

Lin, Mon-Sen ;

Wu, Tsu-Yi ;

Adriyanto, Feri ;

Sze, Po-Wen ;

Wu, Chang-Luen ;

Wang, Yeong-Her .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (01) :121-127

[8] High-Temperature Performance of AlGaN/GaN MOSHEMT With SiO2 Gate Insulator Fabricated on Si (111) Substrate [J].

Husna, Fatima ;

Lachab, Mohamed ;

Sultana, Mahbuba ;

Adivarahan, Vinod ;

Fareed, Qhalid ;

Khan, Asif .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (09) :2424-2429

[9] High Quality SiO2/Al2O3 Gate Stack for GaN Metal-Oxide-Semiconductor Field-Effect Transistor [J].

Kambayashi, Hiroshi ;

Nomura, Takehiko ;

Ueda, Hirokazu ;

Harada, Katsushige ;

Morozumi, Yuichiro ;

Hasebe, Kazuhide ;

Teramoto, Akinobu ;

Sugawa, Shigetoshi ;

Ohmi, Tadahiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2013, 52 (04)

[10] Thermal stability of lanthanum oxynitride ultrathin films deposited on silicon substrates [J].

Kawada, Nobuhito ;

Ito, Masahiko ;

Saito, Yoji .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (12) :9197-9199

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