Vertical transport of hot electrons in GaAs/AlAs superlattices

被引：2
|
作者：
Mirlin, DN [1 ]
Sapega, VF [1 ]
Ustinov, VM [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 2004年 / 38卷 / 05期
基金：
俄罗斯基础研究基金会;
关键词：
D O I：
10.1134/1.1755895
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Ballistic transport of hot photoexcited electrons injected from a superlattice into an enlarged quantum well is studied using the polarized hot photoluminescence technique. It is established that most photoexcited electrons thermalize before they are captured by the enlarged QW; however, a minor fraction of them reach the enlarged quantum well ballistically, keeping their momentum-distribution anisotropy or spin orientation arising due to the absorption of linearly or circularly polarized light in the superlattice. (C) 2004 MAIK "Nauka/Interperiodica".
引用
收藏
页码：576 / 580
页数：5
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