Vertical transport of hot electrons in GaAs/AlAs superlattices

被引：2

作者：

Mirlin, DN ^{[1
]}

Sapega, VF ^{[1
]}

Ustinov, VM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2004年 / 38卷 / 05期

基金：

俄罗斯基础研究基金会;

关键词：

D O I：

10.1134/1.1755895

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Ballistic transport of hot photoexcited electrons injected from a superlattice into an enlarged quantum well is studied using the polarized hot photoluminescence technique. It is established that most photoexcited electrons thermalize before they are captured by the enlarged QW; however, a minor fraction of them reach the enlarged quantum well ballistically, keeping their momentum-distribution anisotropy or spin orientation arising due to the absorption of linearly or circularly polarized light in the superlattice. (C) 2004 MAIK "Nauka/Interperiodica".

引用

页码：576 / 580

页数：5

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