AlGaInAs/InP eye-safe laser pumped by a Q-switched Nd:GdVO4 laser

被引：9

作者：

Huang, S. C. ^{[1
]}

Chang, H. L. ^{[1
]}

Su, K. W. ^{[1
]}

Li, A. ^{[1
]}

Liu, S. C. ^{[1
]}

Chen, Y. F. ^{[1
]}

Huang, K. F. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30050, Taiwan

来源：

APPLIED PHYSICS B-LASERS AND OPTICS | 2009年 / 94卷 / 03期

关键词：

OPTICAL PARAMETRIC OSCILLATOR; SOLID-STATE LASERS; EFFICIENT; EMISSION; CRYSTALS; ER3+; INP;

D O I：

10.1007/s00340-008-3346-2

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

An AlGaInAs quantum-well structure grown on a Fe-doped InP transparent substrate is developed to be a gain medium in a high-peak-power nanosecond laser at 1570 nm. Using an actively Q-witched 1064 nm laser to pump the gain chip, an average output power of 135 mW is generated at a pulse repetition rate of 30 kHz and an average pump power of 1.25 W. At a pulse repetition rate of 20 kHz, the peak output power is up to 290 W at a peak pump power of 2.3 kW.

引用

页码：483 / 487

页数：5

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