Room temperature ferromagnetism in Cd-doped ZnO thin films through defect engineering

被引:20
作者
Debbichi, M. [1 ]
Souissi, M. [2 ]
Fouzri, A. [3 ]
Schmerber, G. [4 ]
Said, M. [1 ]
Alouani, M. [4 ]
机构
[1] Fac Sci Monastir, Dept Phys, Lab Mat Condensee & Nanosci, Monastir 5019, Tunisia
[2] Dammam Univ, Coll Arts & Sci Nayriya, Dammam 31441, Saudi Arabia
[3] Univ Monastir, Lab Phys Chim Mat, Unite Serv Commun Rech High Resolut Xray Diffract, Dept Phys,Fac Sci Monastir, Monastir 5019, Tunisia
[4] Univ Strasbourg, UMR CNRS 7504, IPCMS, F-67034 Strasbourg 2, France
关键词
Thin films; X-ray diffraction topography; Oxides; Magnetic properties; Ab initio calculations; OPTICAL-PROPERTIES; SEMICONDUCTORS; MN;
D O I
10.1016/j.jallcom.2014.01.247
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Room-temperature ferromagnetism is detected in undoped and cadmium-doped ZnO (ZnO:Cd) thin film grown on c-plane sapphire substrate by metal-organic chemical vapor deposition method. To elucidate the origin of ferromagnetism, a theoretical study based on density functional theory is conducted, focusing on the role of the neutral cation vacancy on the appearance of magnetism in Cd-doped ZnO thin film. The calculations revealed that Cd substitution at Zn sites contributes to the long-ranged ferromagnetism in ZnO by lowering the formation energy of Zn vacancies and thereby stabilizing Zn vacancies from which the magnetic moments originate. (C) 2014 Elsevier B.V. All rights reserved.
引用
收藏
页码:120 / 125
页数:6
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