Tunneling field-effect transistor with epitaxial junction in thin germanium-on-insulator

被引：75

作者：

Kazazis, D. ^{[1
]}

Jannaty, P. ^{[1
]}

Zaslavsky, A. ^{[1
]}

Le Royer, C. ^{[2
]}

Tabone, C. ^{[2
]}

Clavelier, L. ^{[2
]}

Cristoloveanu, S. ^{[3
]}

机构：

[1] Brown Univ, Div Engn, Providence, RI 02912 USA

[2] LETI Minatec, CEA, F-38054 Grenoble 9, France

[3] IMEP INPG Minatec, F-38016 Grenoble 1, France

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 26期

基金：

美国国家科学基金会;

关键词：

dielectric materials; elemental semiconductors; field effect transistors; germanium; hafnium compounds; semiconductor epitaxial layers; semiconductor-insulator boundaries; tunnelling; GATE; MOSFETS;

D O I：

10.1063/1.3168646

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the fabrication and electrical characterization at room and low temperatures of a tunneling field-effect transistor (TFET). The devices are fabricated in thin germanium-on-insulator and consist of a heavily p(+)-doped, epitaxially grown source, a heavily n(+)-doped ion implanted drain, and a standard high-kappa (HfO(2)) gate stack with an effective gate length L(eff) of 60 nm, obtained by trimming. The TFETs are fabricated using an ultralarge-scale integration compatible process flow. The devices exhibit an ambipolar behavior, reasonable on/off current ratio, and improved on current compared to silicon-on-insulator TFETs.

引用

页数：3

共 20 条

[1] Lateral interband tunneling transistor in silicon-on-insulator [J].