TCAD Calibration for Cu2ZnSnS4 Solar Cell Simulation

被引：0

作者：

Mopurisetty, Sundara Murthy ^{[1
]}

Bajaj, Mohit ^{[2
]}

Ganguly, Swaroop ^{[1
]}

机构：

[1] Indian Inst Technol, Dept Elect Engn, Bombay 400076, Maharashtra, India

[2] Globalfoundries Engn Private Ltd, Bangalore 500045, Karnataka, India

来源：

2016 IEEE 43RD PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2016年

关键词：

Optical constants; Transfer matrix method; Absorber layer; CZTS; CDS THIN-FILMS; OPTICAL-PROPERTIES; AL;

D O I：

暂无

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

We present a TCAD simulation deck for Cu2ZnSnS4 (CZTS) solar cells that is calibrated to data from the best reported experimental device structure: the wherewithal for future predictive device modeling. The calibration is performed by matching the experimental external quantum efficiency (EQE) and current density vs. voltage (J-V) characteristics with those obtained from combined optical and electrical simulations. We find that using theoretically calculated extinction coefficient (k) values in the simulation leads to large discrepancy with experiment; on the other hand, experimentally measured k-values for bulk CZTS need only modest modification (at near-bandgap) in order to be able to fit the EQE data for the device-structured CZTS that we have here.

引用

页码：2228 / 2231

页数：4

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