Two-dimensional electronic transport and surface electron accumulation in MoS2

被引:166
作者
Siao, M. D. [1 ]
Shen, W. C. [2 ]
Chen, R. S. [1 ]
Chang, Z. W. [3 ]
Shih, M. C. [4 ]
Chiu, Y. P. [3 ,4 ]
Cheng, C. -M. [5 ,6 ]
机构
[1] Natl Taiwan Univ Sci & Technol, Grad Inst Appl Sci & Technol, Taipei 10607, Taiwan
[2] Natl Taiwan Univ Sci & Technol, Dept Elect Engn, Taipei 10607, Taiwan
[3] Natl Taiwan Normal Univ, Dept Phys, Taipei 11677, Taiwan
[4] Natl Taiwan Univ, Dept Phys, Taipei 10617, Taiwan
[5] Natl Synchrotron Radiat Res Ctr, Hsinchu 30076, Taiwan
[6] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 80424, Taiwan
关键词
THIN-FILMS; MONOLAYER; GRAPHENE; TRANSISTORS; TRANSITION; RESISTANCE; EVOLUTION; CONTACTS; GROWTH; STATES;
D O I
10.1038/s41467-018-03824-6
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Because the surface-to-volume ratio of quasi-two-dimensional materials is extremely high, understanding their surface characteristics is crucial for practically controlling their intrinsic properties and fabricating p-type and n-type layered semiconductors. Van der Waals crystals are expected to have an inert surface because of the absence of dangling bonds. However, here we show that the surface of high-quality synthesized molybdenum disulfide (MoS2) is a major n-doping source. The surface electron concentration of MoS2 is nearly four orders of magnitude higher than that of its inner bulk. Substantial thickness-dependent conductivity in MoS2 nanoflakes was observed. The transfer length method suggested the current transport in MoS2 following a two-dimensional behavior rather than the conventional three-dimensional mode. Scanning tunneling microscopy and angle-resolved photoemission spectroscopy measurements confirmed the presence of surface electron accumulation in this layered material. Notably, the in situ-cleaved surface exhibited a nearly intrinsic state without electron accumulation.
引用
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页数:12
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