Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy

被引：303

作者：

Onuma, Takeyoshi ^{[1
,2
]}

Saito, Shingo ^{[2
]}

Sasaki, Kohei ^{[2
,3
]}

Masui, Tatekazu ^{[3
]}

Yamaguchi, Tomohiro ^{[1
]}

Honda, Tohru ^{[1
]}

Higashiwaki, Masataka ^{[2
]}

机构：

[1] Kogakuin Univ, Dept Appl Phys, Hachioji, Tokyo 1920015, Japan

[2] Natl Inst Informat & Commun Technol, Koganei, Tokyo 1848795, Japan

[3] Tamura Corp, Sayama, Saitama 3501328, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2015年 / 54卷 / 11期

关键词：

ABSORPTION; GROWTH;

D O I：

10.7567/JJAP.54.112601

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The polarized transmittance and reflectance spectra of beta-Ga2O3 crystals are investigated, and the data are interpreted in terms of the monoclinic crystal band structure. The energies of the absorption edge can be divided into six ranges, and these ranges can be assigned to the transitions from the valence bands to the conduction band minimum according to the selection rules. The indirect bandgap-energy of 4.43 eV is smaller than the direct bandgap-energy of 4.48 eV at RT; and the energy difference of 0.05 eV nearly matches the theoretically calculated values of 0.03-0.04 eV. (C) 2015 The Japan Society of Applied Physics

引用

页数：5

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