Optimization of Sputtering Parameters for the Deposition of Low Resistivity Indium Tin Oxide Thin Films

被引:14
作者
Yasrebi, Navid [1 ]
Bagheri, Behrang [1 ]
Yazdanfar, Payam [1 ]
Rashidian, Bizhan [1 ]
Sasanpour, Pezhman [2 ]
机构
[1] Sharif Univ Technol, Dept Elect Engn, Tehran, Iran
[2] Shahid Beheshti Univ Med Sci, Dept Med Phys & Biomed Engn, Fac Med, Tehran, Iran
关键词
Indium tin oxide; Sputtering; Deposition; Parameters optimization; ELECTROOPTICAL PROPERTIES; TRANSPARENT CONDUCTORS; ROOM-TEMPERATURE; ITO; CRYSTALLIZATION;
D O I
10.1007/s40195-014-0048-0
中图分类号
TF [冶金工业];
学科分类号
0806 ;
摘要
Indium tin oxide (ITO) thin films have been deposited using RF sputtering technique at different pressures, RF powers, and substrate temperatures. Variations in surface morphology, optical properties, and film resistances were measured and analyzed. It is shown that a very low value of sheet resistance (1.96 Omega/sq.) can be achieved with suitable arrangement of the deposition experiments. First, at constant RF power, deposition at different pressure values is done, and the condition for achieving minimum sheet resistance (26.43 Omega/sq.) is found. In the next step, different values of RF powers are tried, while keeping the pressure fixed on the previously found minimum point (1-2 Pa). Finally, the minimum resistivity is obtained by sweeping the substrate temperatures, while keeping RF power and the working pressure at their optimum values. Furthermore, the effects of process parameters on properties, such as the surface morphology and the optical transmission, are discussed. Although the point of minimum resistivity does not coincide with that of the maximum transparency of ITO film, relatively acceptable values of transmittance (approximately 75% on a glass substrate with intrinsic transparency of 89%) can be obtained.
引用
收藏
页码:324 / 330
页数:7
相关论文
共 49 条
[1]   Crystallization process and electro-optical properties of In2O3 and ITO thin films [J].
Adurodija, Frederick Ojo ;
Semple, Lynne ;
Bruning, Ralf .
JOURNAL OF MATERIALS SCIENCE, 2006, 41 (21) :7096-7102
[2]   Early stage growth structure of indium tin oxide thin films deposited by reactive thermal evaporation [J].
Amaral, A ;
Brogueira, P ;
de Carvalho, CN ;
Lavareda, G .
SURFACE & COATINGS TECHNOLOGY, 2000, 125 (1-3) :151-156
[3]   Thin films engineering of indium tin oxide:: Large area flat panel displays application [J].
Betz, U ;
Olsson, MK ;
Marthy, J ;
Escolá, MF ;
Atamny, F .
SURFACE & COATINGS TECHNOLOGY, 2006, 200 (20-21) :5751-5759
[4]   TRANSPARENT CONDUCTORS - A STATUS REVIEW [J].
CHOPRA, KL ;
MAJOR, S ;
PANDYA, DK .
THIN SOLID FILMS, 1983, 102 (01) :1-46
[5]   On the structure and surface chemical composition of indium-tin oxide films prepared by long-throw magnetron sputtering [J].
Chuang, M. J. ;
Huang, H. F. ;
Wen, C. H. ;
Chu, A. K. .
THIN SOLID FILMS, 2010, 518 (08) :2290-2294
[6]   ITO Films Prepared by Long-throw Magnetron Sputtering without Oxygen Partial Pressure [J].
Chuang, Miaoju .
JOURNAL OF MATERIALS SCIENCE & TECHNOLOGY, 2010, 26 (07) :577-583
[7]   Solution-processed flexible transparent conductors composed of silver nanowire networks embedded in indium tin oxide nanoparticle matrices [J].
Chung, Choong-Heui ;
Song, Tze-Bin ;
Bob, Brion ;
Zhu, Rui ;
Yang, Yang .
NANO RESEARCH, 2012, 5 (11) :805-814
[8]   Damage at hydrogenated amorphous/crystalline silicon interfaces by indium tin oxide overlayer sputtering [J].
Demaurex, Benedicte ;
De Wolf, Stefaan ;
Descoeudres, Antoine ;
Holman, Zachary Charles ;
Ballif, Christophe .
APPLIED PHYSICS LETTERS, 2012, 101 (17)
[9]   The effect of sputtering pressure on electrical, optical and structure properties of indium tin oxide on glass [J].
Elhalawaty, S. ;
Siyaramakrishnan, K. ;
Theodore, N. D. ;
Alford, T. L. .
THIN SOLID FILMS, 2010, 518 (12) :3326-3331
[10]  
Farahamndjou M, 2013, REV MEX FIS, V59, P205