Threshold field for soft damage and electron drift velocity in InGaN two-dimensional channels

被引：14

作者：

Ardaravicius, L. ^{[1
]}

Kiprijanovic, O. ^{[1
]}

Liberis, J. ^{[1
]}

Sermuksnis, E. ^{[1
]}

Matulionis, A. ^{[1
]}

Ferreyra, A. ^{[2
,3
]}

Avrutin, V. ^{[3
]}

Ozgur, U. ^{[3
]}

Morkoc, H.

机构：

[1] Ctr Phys Sci & Technol, Inst Semicond Phys, A Gostauto 11, LT-01108 Vilnius, Lithuania

[2] Kyoto Inst Technol, Nano Mat & Device Res Ctr, Kyoto 606, Japan

[3] Virginia Commonwealth Univ, Dept Elect & Comp Engn, Richmond, VA 23284 USA

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2015年 / 30卷 / 10期

关键词：

high-field transport; threshold field; drift velocity; InGaN; hot-phonon lifetime; electron density; GAN;

D O I：

10.1088/0268-1242/30/10/105016

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Experimental investigation of electron transport along a two-dimensional channel confined in an InGaN alloy of Al0.82In0.18N/AlN/In0.1Ga0.9N/GaN structure was performed at room temperature under near-equilibrium thermal-bath temperature. A soft damage was observed at a threshold electric field applied in the channel plane. The threshold current for soft damage and the supplied electric power were lower in the channels with a higher electron density. The results are interpreted in terms of plasmon-assisted heat dissipation. In agreement with ultra-fast decay of hot phonons in the vicinity of the resonance with plasmons, the electron drift velocity acquires a highest value of similar to 2 x 10(7) cm s(-1) at 180 kV cm(-1) in channels with 1 x 10(13) cm(-2) and decreases as the electron density increases. No negative differential resistance is observed. The effective hot-phonon lifetime is estimated as similar to 2 ps at 1.6 x 10(13) cm(-2) at low electric fields and is found to decrease as the field increases.

引用

页数：6

共 26 条

[1] Hot-electron drift velocity and hot-phonon decay in AlInN/AlN/GaN [J].

Ardaravicius, L. ;

Liberis, J. ;

Kiprijanovic, O. ;

Matulionis, A. ;

Wu, M. ;

Morkoc, H. .

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS, 2011, 5 (02) :65-67

[2] Electron drift velocity in AlGaN/GaN channel at high electric fields [J].

Ardaravicius, L ;

Matulionis, A ;

Liberis, J ;

Kiprijanovic, O ;

Ramonas, M ;

Eastman, LF ;

Shealy, JR ;

Vertiatchikh, A .

APPLIED PHYSICS LETTERS, 2003, 83 (19) :4038-4040

[3] Electron drift velocity in lattice-matched AlInN/AlN/GaN channel at high electric fields [J].

Ardaravicius, L. ;

Ramonas, M. ;

Liberis, J. ;

Kiprijanovic, O. ;

Matulionis, A. ;

Xie, J. ;

Wu, M. ;

Leach, J. H. ;

Morkoc, H. .

JOURNAL OF APPLIED PHYSICS, 2009, 106 (07)

[4] Current status of AlInN layers lattice-matched to GaN for photonics and electronics [J].

Butte, R. ;

Carlin, J-F ;

Feltin, E. ;

Gonschorek, M. ;

Nicolay, S. ;

Christmann, G. ;

Simeonov, D. ;

Castiglia, A. ;

Dorsaz, J. ;

Buehlmann, H. J. ;

Christopoulos, S. ;

von Hoegersthal, G. Baldassarri Hoeger ;

Grundy, A. J. D. ;

Mosca, M. ;

Pinquier, C. ;

Py, M. A. ;

Demangeot, F. ;

Frandon, J. ;

Lagoudakis, P. G. ;

Baumberg, J. J. ;

Grandjean, N. .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2007, 40 (20) :6328-6344

[5] Hot phonon-plasmon modes in GaN [J].

Dyson, A. ;

Ridley, B. K. .

JOURNAL OF APPLIED PHYSICS, 2010, 108 (10)

[6] Effects of light illumination on electron velocity of AlGaN/GaN heterostructures under high electric field [J].

Guo, Lei ;

Yang, Xuelin ;

Feng, Zhihong ;

Lv, Yuanjie ;

Cheng, Jianpeng ;

Sang, Ling ;

Xu, Fujun ;

Tang, Ning ;

Wang, Xinqiang ;

Ge, Weikun ;

Shen, B. .

APPLIED PHYSICS LETTERS, 2014, 105 (24)

[7]

KASH JA, 1992, MODERN PROBLEMS COND, V35, P113

[8] Degradation in InAlN/AlN/GaN heterostructure field-effect transistors as monitored by low-frequency noise measurements: Hot phonon effects [J].

Kayis, C. ;

Ferreyra, R. A. ;

Wu, M. ;

Li, X. ;

Ozgur, U. ;

Matulionis, A. ;

Morkoc, H. .

APPLIED PHYSICS LETTERS, 2011, 99 (06)

[9] Hot phonon effect on electron velocity saturation in GaN: A second look [J].

Khurgin, Jacob ;

Ding, Yujie J. ;

Jena, Debdeep .

APPLIED PHYSICS LETTERS, 2007, 91 (25)

[10] Power electronics on InAlN/(In)GaN:: Prospect for a record performance [J].

Kuzmík, J .

IEEE ELECTRON DEVICE LETTERS, 2001, 22 (11) :510-512

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