Structural and optical properties of nearly stress-free m-plane ZnO film on (100) γ-LiAlO2 with a GaN buffer layer by metal-organic chemical vapor deposition

被引：6

作者：

Lin, Hui ^{[1
,2
]}

Zhou, Shengming ^{[1
]}

Teng, Hao ^{[1
,2
]}

Hou, Xiaorui ^{[1
,2
]}

Jia, Tingting ^{[1
,2
]}

Gu, Shulin ^{[3
,4
]}

Zhu, Shunming ^{[3
,4
]}

Xie, Zili ^{[3
,4
]}

Han, Ping ^{[3
,4
]}

Zhang, Rong ^{[3
,4
]}

Xu, Ke ^{[5
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

[3] Nanjing Univ, Key Lab Adv Photon & Elect Mat, Nanjing 210093, Peoples R China

[4] Nanjing Univ, Dept Phys, Nanjing 210093, Peoples R China

[5] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Suzhou 215125, Peoples R China

来源：

APPLIED SURFACE SCIENCE | 2009年 / 255卷 / 22期

基金：

中国国家自然科学基金;

关键词：

m-Plane ZnO thin film; Semiconductor compounds; Chemical vapor deposition; Residual stress; Photoluminescence spectra; GROWTH; ANISOTROPY;

D O I：

10.1016/j.apsusc.2009.06.127

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

(1 0 (1) over bar 0) m-plane ZnO film was epitaxially deposited on (1 0 0) gamma-LiAlO2 by metal-organic chemical vapor deposition at 600 degrees C with a GaN buffer layer. The epitaxial relationships between ZnO and GaN, GaN and (1 0 0) gamma-LiAlO2 were determined by X-ray diffraction Phi-scans. There exhibits very small decrease for the E-2 mode shift (0.3 cm (1)) of ZnO in the Raman spectrum, which indicates the epitaxial ZnO film was under a slight tensile stress (5.77 x 10(7) Pa). Unlike the highly strained a-plane ZnO, temperature dependent photoluminescence spectra show that the free A exiton emission was observed with the temperature <= 138 K. (C) 2009 Elsevier B. V. All rights reserved.

引用

页码：9146 / 9148

页数：3

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