Growth of vertical InAs nanowires on heterostructured substrates

被引：19

作者：

Roddaro, Stefano ^{[1
,2
]}

Caroff, Philippe ^{[3
]}

Biasiol, Giorgio ^{[4
]}

Rossi, Francesca ^{[5
]}

Bocchi, Claudio ^{[5
]}

Nilsson, Kristian ^{[3
]}

Froberg, Linus ^{[3
]}

Wagner, Jakob B. ^{[3
]}

Samuelson, Lars ^{[3
]}

Wernersson, Lars-Erik ^{[3
]}

Sorba, Lucia ^{[1
,2
,4
]}

机构：

[1] INFM, CNR, NEST, I-56127 Pisa, Italy

[2] Scuola Normale Super Pisa, I-56127 Pisa, Italy

[3] Lund Univ, Solid State Phys & Nanometer Struct Consortium, S-22100 Lund, Sweden

[4] INFM Lab, CNR, TASC, I-34012 Trieste, Italy

[5] IMEM, Inst CNR, I-43100 Parma, Italy

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 28期

基金：

瑞典研究理事会;

关键词：

EPITAXIAL-GROWTH; WRAP GATE; GAAS; SI; TRANSISTORS; MONOLAYER; ARSENIDE; SILICON;

D O I：

10.1088/0957-4484/20/28/285303

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We investigate the Au-assisted growth of InAs nanowires on two different kinds of heterostructured substrates: GaAs/AlGaAs structures capped by a 50 nm thick InAs layer grown by molecular beam epitaxy and a 2 mu m thick InAs buffer layer on Si(111) obtained by vapor phase epitaxy. Morphological and structural properties of substrates and nanowires are analyzed by atomic force and transmission electron microscopy. Our results indicate a promising direction for the integration of III-V nanostructures on Si-based electronics as well as for the development of novel micromechanical structures incorporating nanowires as their active elements.

引用

页数：6

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