Enhanced thermoelectric performance in Mg3+xSb1.5Bi0.49Te0.01 via engineering microstructure through melt-centrifugation

被引:28
作者
Ozen, Melis [1 ,2 ]
Yahyaoglu, Mujde [1 ,2 ]
Candolfi, Christophe [3 ]
Veremchuk, Igor [4 ]
Kaiser, Felix [5 ]
Burkhardt, Ulrich [5 ]
Snyder, G. Jeffrey [6 ]
Grin, Yuri [5 ]
Aydemir, Umut [2 ,7 ]
机构
[1] Koc Univ, Grad Sch Sci & Engn, TR-34450 Istanbul, Turkey
[2] Koc Univ, Boron & Adv Mat Applicat & Res Ctr, TR-34450 Istanbul, Turkey
[3] Univ Lorraine, Inst Jean Lamour, UMR 7198, CNRS, Campus ARTEM,2 Allee Andre Guinier,BP 50840, F-54011 Nancy, France
[4] Helmholtz Zentrum Dresden Rossendorf, Inst Ion Beam Phys & Mat Res, D-01328 Dresden, Germany
[5] Max Planck Inst Chem Phys Fester Stoffe, D-01187 Dresden, Germany
[6] Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
[7] Koc Univ, Dept Chem, TR-34450 Istanbul, Turkey
关键词
CARRIER SCATTERING MECHANISM; TRANSPORT-PROPERTIES; ZINTL COMPOUNDS; STRATEGIES; EFFICIENCY; COMPOUND; SB;
D O I
10.1039/d0ta09993g
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
N-type Zintl phases with earth-abundant and non-toxic constituent elements have attracted intense research interest thanks to their high thermoelectric efficiencies in the mid-temperature range, exemplified by the recently discovered Mg3Sb2 material. In this study, the liquid phase is expelled from the microstructure of the optimized n-type phase Mg3+xSb1.5Bi0.49Te0.01 by applying a meltcentrifugation technique leading to the formation of lattice dislocations, grain boundary dislocations and increasing porosity. Additional phonon scattering mechanisms were introduced in the microstructure through this manufacturing method, resulting in a significant 50% reduction in the total thermal conductivity from similar to 1 W m(-1) K-1 to similar to 0.5 W m(-1) K-1 at 723 K. Combined with high power factors, this reduced heat transport leads to a dimensionless thermoelectric figure of merit, zT, value of similar to 1.64 at 723 K, 43% higher than the value obtained in untreated Mg3+xSb1.5Bi0.49Te0.01 (zT similar to 1.14 at 723 K). This peak zT value yields a predicted device ZT of 0.95, and a promising theoretical thermoelectric efficiency of about 12%. These results further underline the great potential of the lightweight Mg3Sb2 material for midtemperature energy harvesting via thermoelectric effects.
引用
收藏
页码:1733 / 1742
页数:10
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