Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3

被引：5

作者：

Shi, Jianjun ^{[1
]}

Xia, Xiaochuan ^{[1
]}

Abbas, Qasim ^{[1
]}

Liu, Jun ^{[1
]}

Zhang, Heqiu ^{[1
]}

Liu, Yang ^{[1
]}

Liang, Hongwei ^{[1
]}

机构：

[1] Dalian Univ Technol, Sch Microelect, Dalian 116024, Peoples R China

来源：

JOURNAL OF SEMICONDUCTORS | 2019年 / 40卷 / 01期

基金：

中国博士后科学基金; 美国国家科学基金会;

关键词：

Mg/Au; beta-gallium oxide; ohmic contact; thermionic emission theory; effective barrier height; SINGLE-CRYSTALS; GROWTH;

D O I：

10.1088/1674-4926/40/1/012805

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The carrier transport mechanism of Mg/Au ohmic contact for lightly doped beta-Ga2O3 is investigated. An excellent ohmic contact has been achieved when the sample was annealed at 400 degrees C and the specific contact resistance is 4.3 x 10(-4) Omega.cm(2). For the annealed sample, the temperature dependence of specific contact resistance is studied in the range from 300 to 375 K. The specific contact resistance is decreased from 4.3 x 10(-4) to 1.59 x 10-4 Omega.cm(2) with an increase of test temperature. As combination with the judge of E-00, the basic mechanism of current transport is dominant by thermionic emission theory. The effective barrier height between Mg/Au and beta-Ga2O3 is evaluated to be 0.1 eV for annealed sample by fitting experimental data with thermionic emission model.

引用

页数：4

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