Formation of Ru nanocrystals by plasma enhanced atomic layer deposition for nonvolatile memory applications

被引：58
作者：
Yim, Sung-Soo [1 ]
Lee, Moon-Sang [1 ]
Kim, Ki-Su [1 ]
Kim, Ki-Bum [1 ]
机构：
[1] Seoul Natl Univ, Sch Mat Sci & Engn, Seoul 151742, South Korea
来源：
APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 09期
关键词：
D O I：
10.1063/1.2338793
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The formation of Ru nanocrystals is demonstrated on a SiO2 substrate by plasma enhanced atomic layer deposition using diethylcyclopentadienyl ruthenium and NH3 plasma. The island growth of Ru was observed at the initial stages of the film formation up to a nominal thickness of 11.1 nm. A maximum Ru nanocrystal spatial density of 9.7x10(11) /cm(2) was achieved with an average size of 3.5 nm and standard deviation of the size of 20%. Electron charging/discharging effect in the Ru nanocrystals is demonstrated by measuring the flatband voltage shift in the capacitance-voltage measurement of metal-oxide-semiconductor memory capacitor structure. (c) 2006 American Institute of Physics.
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共 18 条
  • [1] Ruthenium thin films grown by atomic layer deposition
    Aaltonen, T
    Alén, P
    Ritala, M
    Leskelä, M
    [J]. CHEMICAL VAPOR DEPOSITION, 2003, 9 (01) : 45 - 49
  • [2] BAIK SJ, 2003, INT EL DEV M
  • [3] De Salvo B., 2003, INT EL DEV M
  • [4] Fast and long retention-time nano-crystal memory
    Hanafi, HI
    Tiwari, S
    Khan, I
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (09) : 1553 - 1558
  • [5] Iler R. K., 1979, CHEM SILICA, P645
  • [6] Charge storage and interface states effects in Si-nanocrystal memory obtained using low-energy Si+ implantation and annealing
    Kapetanakis, E
    Normand, P
    Tsoukalas, D
    Beltsios, K
    Stoemenos, J
    Zhang, S
    van den Berg, J
    [J]. APPLIED PHYSICS LETTERS, 2000, 77 (21) : 3450 - 3452
  • [7] PEALD of a ruthenium adhesion layer for copper interconnects
    Kwon, OK
    Kwon, SH
    Park, HS
    Kang, SW
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2004, 151 (12) : C753 - C756
  • [8] Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications -: art. no. 103505
    Lee, JJ
    Harada, Y
    Pyun, JW
    Kwong, DL
    [J]. APPLIED PHYSICS LETTERS, 2005, 86 (10) : 1 - 3
  • [9] Atomic layer deposition (ALD):: from precursors to thin film structures
    Leskelä, M
    Ritala, M
    [J]. THIN SOLID FILMS, 2002, 409 (01) : 138 - 146
  • [10] Analysis of a transient region during the initial stage of atomic layer deposition
    Lim, JW
    Park, HS
    Kang, SW
    [J]. JOURNAL OF APPLIED PHYSICS, 2000, 88 (11) : 6327 - 6331
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