Impact of artificial lateral quantum confinement on exciton-spin relaxation in a two-dimensional GaAs electronic system

被引：5

作者：

Kiba, Takayuki ^{[1
,4
]}

Tanaka, Toru ^{[1
]}

Tamura, Yosuke ^{[2
]}

Higo, Akio ^{[3
]}

Thomas, Cedric ^{[2
,4
]}

Samukawa, Seiji ^{[2
,3
,4
]}

Murayama, Akihiro ^{[1
,4
]}

机构：

[1] Hokkaido Univ, Grad Sch Informat Sci & Technol, Kita Ku, Sapporo, Hokkaido, Japan

[2] Tohoku Univ, Inst Fluid Sci, Aoba Ku, Sendai, Miyagi 980, Japan

[3] Tohoku Univ, WPI AIMR, Aoba Ku, Sendai, Miyagi 980, Japan

[4] CREST Japan Sci & Technol Agcy, Chiyoda Ku, Tokyo, Japan

来源：

AIP ADVANCES | 2014年 / 4卷 / 10期

基金：

日本学术振兴会;

关键词：

DYNAMICS;

D O I：

10.1063/1.4897958

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate the effect of artificial lateral quantum confinement on exciton-spin relaxation in a GaAs electronic system. GaAs nanodisks (NDs) were fabricated from a quantum well (QW) by top-down nanotechnology using neutral-beam etching aided by protein-engineered bio-nano-templates. The exciton-spin relaxation time was 1.4 ns due to ND formation, significantly extended compared to 0.44 ns for the original QW, which is attributed to weakening of the hole-state mixing in addition to freezing of the carrier momentum. The temperature dependence of the spin-relaxation time depends on the ND thickness, reflecting the degree of quantum confinement. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

引用

页数：7

共 27 条

[1] Challenges for semiconductor spintronics [J].

Awschalom, David D. ;

Flatte, Michael E. .

NATURE PHYSICS, 2007, 3 (03) :153-159

[2] Temperature dependence of dynamic nuclear polarization and its effect on electron spin relaxation and dephasing in InAs/GaAs quantum dots [J].

Beyer, J. ;

Puttisong, Y. ;

Buyanova, I. A. ;

Suraprapapich, S. ;

Tu, C. W. ;

Chen, W. M. .

APPLIED PHYSICS LETTERS, 2012, 100 (14)

[3]

Bir G., 1976, Sov. Phys. JETP, V42, P705

[4] Direct observation of the electron spin relaxation induced by nuclei in quantum dots [J].

Braun, PF ;

Marie, X ;

Lombez, L ;

Urbaszek, B ;

Amand, T ;

Renucci, P ;

Kalevich, VK ;

Kavokin, KV ;

Krebs, O ;

Voisin, P ;

Masumoto, Y .

PHYSICAL REVIEW LETTERS, 2005, 94 (11)

[5] Efficiency of optical spin injection and spin loss from a diluted magnetic semiconductor ZnMnSe to CdSe nonmagnetic quantum dots [J].

Dagnelund, D. ;

Buyanova, I. A. ;

Chen, W. M. ;

Murayama, A. ;

Furuta, T. ;

Hyomi, K. ;

Souma, I. ;

Oka, Y. .

PHYSICAL REVIEW B, 2008, 77 (03)

[6]

DYAKONOV MI, 1986, SOV PHYS SEMICOND+, V20, P110

[7]

Elzerman JM, 2004, NATURE, V430, P431, DOI 10.1039/nature02693

[8] Exciton spin relaxation properties in zero dimensional semiconductor quantum dots [J].

Gotoh, H ;

Kamada, H ;

Ando, H ;

Temmyo, J .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (6A) :3340-3349

[9] Photoluminescence from GaAs nanodisks fabricated by using combination of neutral beam etching and atomic hydrogen-assisted molecular beam epitaxy regrowth [J].

Kaizu, Toshiyuki ;

Tamura, Yosuke ;

Igarashi, Makoto ;

Hu, Weiguo ;

Tsukamoto, Rikako ;

Yamashita, Ichiro ;

Samukawa, Seiji ;

Okada, Yoshitaka .

APPLIED PHYSICS LETTERS, 2012, 101 (11)

[10] Temperature dependence of the dynamics of optical spin injection in self-assembled InGaAs quantum dots [J].

Kiba, Takayuki ;

Yang, Xiao-jie ;

Yamamura, Takafumi ;

Kuno, Yuki ;

Subagyo, Agus ;

Sueoka, Kazuhisa ;

Murayama, Akihiro .

APPLIED PHYSICS LETTERS, 2013, 103 (08)

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