Ab initio studies of bulk uniaxial anisotropy in (Ga,Mn)As

被引：0

作者：

Birowska, M. ^{[1
]}

Silwa, C. ^{[2
]}

Majewski, J. A. ^{[1
]}

Dietl, T. ^{[1
,2
]}

机构：

[1] Univ Warsaw, Fac Phys, Ul Hoza 69, PL-00681 Warsaw, Poland

[2] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICS OF SEMICONDUCTORS | 2013年 / 1566卷

关键词：

DMS; (Ga; Mn)As; ab initio; DFT; magnetic anisotropy energy MAE;

D O I：

10.1063/1.4848406

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present an explanation of the long standing problem of the physical origin of uniaxial magnetic anisotropy energy (MAE) in epitaxially grown cubic (Ga,Mn)As. We prove that the uniaxial MAE originates from the energetic preference of the Mn ion dimers to incorporate along [-110] direction over the [110] one. This leads to lowering of the crystallographic symmetry of the epitaxially grown (Ga, Mn) As layers from cubic to C-2v, and in consequence, to the uniaxial magnetic anisotropy.

引用

页码：303 / +

页数：2

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