Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

被引：16
作者：
Zhao, Xiaolong [1 ,2 ]
Wu, Zhenping [1 ,2 ]
Zhi, Yusong [1 ]
An, Yuehua [1 ]
Cui, Wei [1 ]
Li, Linghong [3 ]
Tang, Weihua [1 ,2 ]
机构：
[1] Beijing Univ Posts & Telecommun, Lab Optoelect Mat & Devices, Sch Sci, Beijing 100876, Peoples R China
[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China
[3] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 08期
基金：
北京市自然科学基金; 中国国家自然科学基金; 中国博士后科学基金;
关键词：
Ga2-xZnxO3; films; solar-blind; photodetector; ultraviolet; OPTICAL-PROPERTIES; LUMINESCENCE; GROWTH;
D O I：
10.1088/1361-6463/aa5758
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Highly oriented ((2) over bar 0 1) Ga2-xZnxO3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)' under 254 nm ultraviolet excitation, and the maximum was obtained at x = 0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-xZnxO3 (x = 0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for beta-Ga2-xZnxO3 (x = 0.8) photodetector were observed with 254 nm ultraviolet illumination.
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页数：6
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