Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

被引：16

作者：

Zhao, Xiaolong ^{[1
,2
]}

Wu, Zhenping ^{[1
,2
]}

Zhi, Yusong ^{[1
]}

An, Yuehua ^{[1
]}

Cui, Wei ^{[1
]}

Li, Linghong ^{[3
]}

Tang, Weihua ^{[1
,2
]}

机构：

[1] Beijing Univ Posts & Telecommun, Lab Optoelect Mat & Devices, Sch Sci, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] SUNY Coll Potsdam, Dept Phys, Potsdam, NY 13676 USA

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2017年 / 50卷 / 08期

基金：

北京市自然科学基金; 中国国家自然科学基金; 中国博士后科学基金;

关键词：

Ga2-xZnxO3; films; solar-blind; photodetector; ultraviolet; OPTICAL-PROPERTIES; LUMINESCENCE; GROWTH;

D O I：

10.1088/1361-6463/aa5758

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Highly oriented ((2) over bar 0 1) Ga2-xZnxO3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)' under 254 nm ultraviolet excitation, and the maximum was obtained at x = 0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-xZnxO3 (x = 0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for beta-Ga2-xZnxO3 (x = 0.8) photodetector were observed with 254 nm ultraviolet illumination.

引用

页数：6

共 34 条

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