Performance study of radiation detectors based on semi-insulating GaAs with P+ homo- and heterojunction blocking electrode

被引：1

作者：

Dubecky, Frantisek

Hulicius, Eduard

Frigeri, Paola

Perd'ochova-Sagatova, Andrea

Zat'ko, Bohumir

Hubik, Pavel

Gombia, Enos

Bohacek, Pavel

Pangrac, Jiri

Franchi, Secondo

Necas, Vladimir

机构：

[1] Slovak Acad Sci, Inst Elect Engn, SK-84104 Bratislava, Slovakia

[2] Acad Sci Czech Republic, Inst Phys, CZ-16253 Prague, Czech Republic

[3] CNR, IMEM, I-43010 Parma, Italy

[4] Slovak Univ Technol Bratislava, Fac Elect Engn & Informat Technol, SK-81219 Bratislava, Slovakia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2006年 / 563卷 / 01期

关键词：

GaAs radiation detector; blocking electrode; P+-N homojunction and heterojunction; gamma irradiation;

D O I：

10.1016/j.nima.2006.01.116

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A preliminary study of technology and performance of radiation detectors based on bulk semi-insulating (SI) GaAs with P+ blocking electrodes is presented. Detectors with blocking electrode system formed either by P+(GaAs)/N-(SI GaAs) homojunction or P+ (Al0.3Ga0.7As)/N-(Sl GaAs) beterojunction are prepared. Room-temperature I-V characteristics, measurement and evaluation of pulse-height spectra using Am-241 and Co-57 radionuclide sources were performed for. the characterization of the fabricated detectors. The aim of the study is to verify the possibility to improve the performances of SI GaAs radiation detectors based on the Schottky contact by using the more sophisticated P+-N junction technology. The obtained results and the possibility of future improvements of SI GaAs radiation detectors to be used in digital X-ray imaging are discussed. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：159 / 162

页数：4

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