High-temperature dielectric and relaxation behavior of Yb-doped Bi0.5Na0.5TiO3 ceramics

被引：84

作者：

Han, Feifei ^{[1
]}

Deng, Jianming ^{[1
]}

Liu, Xiaoqi ^{[1
]}

Yan, Tianxiang ^{[1
]}

Ren, Shaokai ^{[1
]}

Ma, Xing ^{[1
]}

Liu, Saisai ^{[1
]}

Peng, Biaolin ^{[2
,3
]}

Liu, Laijun ^{[1
]}

机构：

[1] Guilin Univ Technol, Coll Mat Sci & Engn, Guangxi Univ Key Lab Nonferrous Met Oxide Elect F, Key Lab Nonferrous Mat & New Proc Technol,Minist, Guilin 541004, Peoples R China

[2] Guangxi Univ, Sch Phys Sci & Technol, Nanning 530004, Peoples R China

[3] Guangxi Univ, Guangxi Key Lab Relativist Astrophys, Nanning 530004, Peoples R China

来源：

CERAMICS INTERNATIONAL | 2017年 / 43卷 / 07期

基金：

中国博士后科学基金; 中国国家自然科学基金;

关键词：

BNT; Dielectric; Relaxor; DIFFUSE PHASE-TRANSITION; ELECTRICAL-PROPERTIES; PIEZOELECTRIC PROPERTIES; HIGH PERMITTIVITY; RELAXOR BEHAVIOR;

D O I：

10.1016/j.ceramint.2017.01.086

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Microstructure, phase transition and dielectric properties of Yb-doped Bi0.5Na0.5TiO3 (BNT) ceramics were investigated. It is found that ytterbium promotes the grain growth and densification of the ceramics while Ti rich impurity appears due to the compensation of Ti-vacancy. The dielectric operational temperature range of the ceramics with a 15% tolerance was greatly broaden until 500 degrees C by ytterbium doping. Meanwhile, the diffuseness of the diffuse phase transition increases with the increase of doping Yb. BNT ceramics with 3 mol% Yb doping shows a near-plateau dielectric behavior in a broad temperature range from 147 to 528 degrees C and a low dielectric loss ( < 0.025) from 154 to 356 degrees C, indicating that it is a promising material for applications in high temperature capacitor.

引用

页码：5564 / 5573

页数：10

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