Piezoelectric oxide semiconductor field effect transistor touch sensing devices

被引：136

作者：

Dahiya, Ravinder S. ^{[1
]}

Metta, Giorgio ^{[1
,2
]}

Valle, Maurizio ^{[3
]}

Adami, Andrea ^{[4
]}

Lorenzelli, Leandro ^{[4
]}

机构：

[1] Italian Inst Technol, RBCS, I-16163 Genoa, Italy

[2] Univ Genoa, DIST, I-16145 Genoa, Italy

[3] Univ Genoa, DIBE, I-16145 Genoa, Italy

[4] Fdn Bruno Kesseler, BioMEMS Grp, I-38050 Trento, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

dielectric polarisation; MIS devices; MOSFET; piezoelectric semiconductors; piezoelectric transducers; spin coating; SILICON; SENSOR; ARRAY;

D O I：

10.1063/1.3184579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin (similar to 2.5 mu m) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral "sensotronic" unit comprising of transducer and the transistor-thereby sensing as well as conditioning (and processing) the touch signal at "same site.".

引用

收藏

页数：3

相关论文

共 50 条

[41] Interfacial X-ray photospectrometry study of In0.53Ga0.47As under different passivation treatments for metal oxide semiconductor field effect transistor devices [J].

Wee, M. F. Mohd Razip ;

Dehzangi, A. ;

Wichmann, N. ;

Bollaert, S. ;

Majlis, Burhanuddin Yeop .

MICRO & NANO LETTERS, 2013, 8 (11) :836-840

[42] Metal oxide semiconductor field effect transistor (MOSFET) model based on a physical high-field carrier-velocity model [J].

Suzuki, K ;

Usuki, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2004, 43 (01) :77-81

[43] Effect of Raised Buried Oxide on Characteristics of Tunnel Field Effect Transistor [J].

Chander, Sweta ;

Sinha, Sanjeet Kumar .

SILICON, 2022, 14 (14) :8805-8813

[44] Effect of Raised Buried Oxide on Characteristics of Tunnel Field Effect Transistor [J].

Sweta Chander ;

Sanjeet Kumar Sinha .

Silicon, 2022, 14 :8805-8813

[45] Design, Simulation, and Fabrication of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) With New Termination Structure [J].

Lin, Jyh-Ling ;

Wen, Lan-Wei .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2012, 59 (12) :3179-3185

[46] A physical model of cylindrical surrounding double-gate metal-oxide-semiconductor field-effect transistor [J].

Liu Jia-Wen ;

Yao Ruo-He ;

Liu Yu-Rong ;

Geng Kui-Wei .

ACTA PHYSICA SINICA, 2021, 70 (15)

[47] Subsurface microscopy of biased metal-oxide-semiconductor field-effect-transistor structures: photothermal and electroreflectance images [J].

Batista, JA ;

Mansanares, AM ;

da Silva, EC ;

Pimentel, MBC ;

Jannuzzi, N ;

Fournier, D .

SENSORS AND ACTUATORS A-PHYSICAL, 1998, 71 (1-2) :40-45

[48] Ion Implantation Dose in Scaled-Down Metal-Oxide-Semiconductor Field Effect Transistor's Gate [J].

Suzuki, Kunihiro .

JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (01)

[49] Narrow-channel metal oxide semiconductor field effect transistor (MOSFET) isolated by an ultra-fine trench [J].

Oishi, T ;

Shiozawa, K ;

Furukawa, A ;

Abe, Y ;

Tokuda, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (5A) :L547-L549

[50] Photo-pseudo-metal-oxide-semiconductor field effect transistor for characterization of surface recombination in silicon on insulator materials [J].

Daanoune, M. ;

Diab, A. ;

Sirajeddine, S. ;

Kaminski-Cachopo, A. ;

Ionica, I. ;

Papaioannou, G. ;

Cristoloveanu, S. .

JOURNAL OF APPLIED PHYSICS, 2013, 113 (18)

← 1 2 3 4 5 →