Piezoelectric oxide semiconductor field effect transistor touch sensing devices

被引:136
作者
Dahiya, Ravinder S. [1 ]
Metta, Giorgio [1 ,2 ]
Valle, Maurizio [3 ]
Adami, Andrea [4 ]
Lorenzelli, Leandro [4 ]
机构
[1] Italian Inst Technol, RBCS, I-16163 Genoa, Italy
[2] Univ Genoa, DIST, I-16145 Genoa, Italy
[3] Univ Genoa, DIBE, I-16145 Genoa, Italy
[4] Fdn Bruno Kesseler, BioMEMS Grp, I-38050 Trento, Italy
关键词
dielectric polarisation; MIS devices; MOSFET; piezoelectric semiconductors; piezoelectric transducers; spin coating; SILICON; SENSOR; ARRAY;
D O I
10.1063/1.3184579
中图分类号
O59 [应用物理学];
学科分类号
摘要
This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin (similar to 2.5 mu m) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral "sensotronic" unit comprising of transducer and the transistor-thereby sensing as well as conditioning (and processing) the touch signal at "same site.".
引用
收藏
页数:3
相关论文
共 50 条
[21]   pH Sensing of Ba0.7Sr0.3TiO3/SiO2 Film for Metal-Oxide-Semiconductor and Ion-Sensitive Field-Effect Transistor Devices [J].
Chen, Chun-Yuan ;
Chou, Jung-Chuan ;
Chou, Hsueh-Tao .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2009, 156 (06) :G59-G64
[22]   Study On Charge Trap Layers In Charge Trap Metal-Oxide-Semiconductor Field Effect Transistor [J].
Cho, Seung Su ;
Joo, Kyong Hee ;
Yeo, In-Seok ;
Chung, Ilsub .
JAPANESE JOURNAL OF APPLIED PHYSICS, 2009, 48 (02)
[23]   Fabrication and Characterization of a Metal Oxide Semiconductor Field Effect Transistor (MOSFET)-based Micro pH Sensor [J].
Seven, Fikri ;
Sen, Mustafa .
2020 MEDICAL TECHNOLOGIES CONGRESS (TIPTEKNO), 2020,
[24]   The effects on metal oxide semiconductor field effect transistor properties of nitrogen implantation into p(+) polysilicon gate [J].
Yasuoka, A ;
Kuroi, T ;
Shimizu, S ;
Shirahata, M ;
Okumura, Y ;
Inoue, Y ;
Inuishi, M ;
Nishimura, T ;
Miyoshi, H .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (02) :617-622
[25]   Energy band structure of quantum-size metal-oxide-semiconductor field effect transistor [J].
Fu, Y ;
Karlsteen, M ;
Willander, M .
SUPERLATTICES AND MICROSTRUCTURES, 1997, 22 (03) :405-410
[26]   Integration process of impact-ionization metal-oxide-semiconductor devices with tunneling field-effect-transistors and metal-oxide-semiconductor field-effect transistors [J].
Choi, Woo Young ;
Lee, Jong Duk ;
Park, Byung-Gook .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (01) :122-124
[27]   Improvement of floating island and thick bottom oxide trench gate metal-oxide-semiconductor field-effect transistor [J].
Takaya, H. ;
Miyagi, K. ;
Hamada, K. .
IET POWER ELECTRONICS, 2011, 4 (08) :860-866
[28]   A high performance In0.53Ga0.47As metal-oxide-semiconductor field effect transistor with silicon interface passivation layer [J].
Zhu, Feng ;
Zhao, Han ;
Ok, I. ;
Kim, H. S. ;
Yum, J. ;
Lee, Jack C. ;
Goel, Niti ;
Tsai, W. ;
Gaspe, C. K. ;
Santos, M. B. .
APPLIED PHYSICS LETTERS, 2009, 94 (01)
[29]   Fabrication of a new Si field emitter tip with metal-oxide-semiconductor field-effect transistor (MOSFET) structure [J].
Hirano, T ;
Kanemaru, S ;
Tanoue, H ;
Itoh, J .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1996, 35 (12B) :6637-6640
[30]   Analysis of heat conduction in a nanoscale metal oxide semiconductor field effect transistor using lattice Boltzmann method [J].
Zobiri, Oussama ;
Atia, Abdelmalek ;
Arici, Muslum .
ENERGY SOURCES PART A-RECOVERY UTILIZATION AND ENVIRONMENTAL EFFECTS, 2023, 45 (03) :8864-8878