Piezoelectric oxide semiconductor field effect transistor touch sensing devices

被引：136

作者：

Dahiya, Ravinder S. ^{[1
]}

Metta, Giorgio ^{[1
,2
]}

Valle, Maurizio ^{[3
]}

Adami, Andrea ^{[4
]}

Lorenzelli, Leandro ^{[4
]}

机构：

[1] Italian Inst Technol, RBCS, I-16163 Genoa, Italy

[2] Univ Genoa, DIST, I-16145 Genoa, Italy

[3] Univ Genoa, DIBE, I-16145 Genoa, Italy

[4] Fdn Bruno Kesseler, BioMEMS Grp, I-38050 Trento, Italy

来源：

APPLIED PHYSICS LETTERS | 2009年 / 95卷 / 03期

关键词：

dielectric polarisation; MIS devices; MOSFET; piezoelectric semiconductors; piezoelectric transducers; spin coating; SILICON; SENSOR; ARRAY;

D O I：

10.1063/1.3184579

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This work presents piezoelectric oxide semiconductor field effect transistor (POSFET) based touch sensing devices. These devices are fabricated by spin coating thin (similar to 2.5 mu m) piezoelectric polymer film directly on to the gate area of metal oxide semiconductor (MOS) transistor. The polymer film is processed in situ and challenging issues such as in situ poling of piezoelectric polymer film, without damaging or altering the characteristics of underlying MOS devices, are successfully dealt with. The POSFET device represents an integral "sensotronic" unit comprising of transducer and the transistor-thereby sensing as well as conditioning (and processing) the touch signal at "same site.".

引用

页数：3

共 15 条

[1] Piezoresistive characteristics of short-channel MOSFETs on (100) silicon [J].