Small-signal response of 1.3-μm InAsP-InGaAsP quantum-well laser diodes obtained with a terahertz-bandwidth frequency comb

被引：4
作者：
Anton, OH [1 ]
Patel, D
Vaschenko, G
Menoni, CS
Pikal, JM
机构：
[1] Colorado State Univ, Dept Elect & Comp Engn, Ft Collins, CO 80523 USA
[2] Univ Wyoming, Dept Elect & Comp Engn, Laramie, WY 82072 USA
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 2004年 / 40卷 / 08期
基金：
美国国家科学基金会;
关键词：
femtosecond frequency comb; optical injection; optical modulation response; strained quantum-well semiconductor lasers;
D O I：
10.1109/JQE.2004.831630
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe an optical method to carry out small-signal frequency response measurements in laser diodes. This method uses a midinfrared tunable femtosecond optical parametric oscillator (OPO), whose frequency spectrum consists of a comb composed by the multiple harmonics of the 81-MHz repetition rate of the same intensity and extending over 2 THz. Tuning of the OPO allows selective generation of carriers in the different regions of the test laser active area without compromising the frequency bandwidth. The small-signal frequency response of the test laser is retrieved from the intensity changes in the frequency comb spectrum. We apply this method to investigate the small-signal frequency response of 1.3-mum InAsP quantum-well (QW) lasers. The results of these experiments show that the intrinsic frequency bandwidth of these lasers is limited to less than 10 GHz as a result of state filling and related carrier escape out of the well. An analysis of the frequency response traces through a solution of a system of rate equations allows us to estimate the magnitude of the gain compression associated with this process.
引用
收藏
页码：982 / 988
页数：7
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