The Annihilation of Threading Dislocations in the Germanium Epitaxially Grown within the Silicon Nanoscale Trenches

被引：10

作者：

Luo, Guang-Li ^{[1
]}

Huang, Shih-Chiang ^{[1
]}

Ko, Chih-Hsin ^{[2
]}

Wann, Clement H. ^{[2
]}

Chung, Cheng-Ting ^{[3
]}

Han, Zong-You ^{[3
]}

Cheng, Chao-Ching ^{[3
]}

Chang, Chun-Yen ^{[3
]}

Lin, Hau-Yu ^{[2
]}

Chien, Chao-Hsin ^{[1
,3
]}

机构：

[1] Natl Nano Device Labs, Hsinchu 300, Taiwan

[2] Taiwan Semicond Mfg Co Ltd, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Elect, Hsinchu 300, Taiwan

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 2009年 / 156卷 / 09期

关键词：

annealing; dislocation density; elemental semiconductors; germanium; isolation technology; nanotechnology; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; BUFFER LAYERS; REDUCTION; SI; DENSITIES;

D O I：

10.1149/1.3158832

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We investigated the selective growth of germanium into nanoscale trenches on silicon substrates. These nanoscale trenches, the smallest size of which was 50 nm, were fabricated using the state-of-the-art shallow trench isolation technique. The quality of the Ge films was evaluated using transmission electron microscopy. The formation of threading dislocations (TDs) was effectively suppressed when using this deposition technique. For the Ge grown in nanoscale Si areas (e.g., several tens of nanometers), the TDs were probably readily removed during cyclic thermal annealing predominantly because their gliding distance to the SiO(2) sidewalls was very short. Therefore, nanoscale epitaxial growth technology can be used to deposit Ge films on lattice-mismatched Si substrates with a reduced defect density.

引用

页码：H703 / H706

页数：4

共 15 条

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