Ultrasensitive and Broadband MoS2 Photodetector Driven by Ferroelectrics

被引：763

作者：

Wang, Xudong ^{[1
,2
]}

Wang, Peng ^{[1
]}

Wang, Jianlu ^{[1
]}

Hu, Weida ^{[1
]}

Zhou, Xiaohao ^{[1
]}

Guo, Nan ^{[1
]}

Huang, Hai ^{[1
]}

Sun, Shuo ^{[1
]}

Shen, Hong ^{[1
]}

Lin, Tie ^{[1
]}

Tang, Minghua ^{[2
]}

Liao, Lei ^{[3
,4
]}

Jiang, Anquan ^{[5
]}

Sun, Jinglan ^{[1
]}

Meng, Xiangjian ^{[1
]}

Chen, Xiaoshuang ^{[1
]}

Lu, Wei ^{[1
]}

Chu, Junhao ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China

[2] Xiangtan Univ, Sch Mat Sci & Engn, Xiangtan 411105, Hunan, Peoples R China

[3] Wuhan Univ, Dept Phys, Minist Educ, Wuhan 430072, Peoples R China

[4] Wuhan Univ, Key Lab Artificial Micro & Nanostruct, Minist Educ, Wuhan 430072, Peoples R China

[5] Fudan Univ, Dept Microelect, Shanghai 200433, Peoples R China

来源：

ADVANCED MATERIALS | 2015年 / 27卷 / 42期

关键词：

LAYER MOS2; GRAPHENE; MONOLAYER; PHOTOTRANSISTORS; ENERGY; DENSITY; STATES;

D O I：

10.1002/adma.201503340

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A few-layer MoS2 photodetector driven by poly(vinylidene fluoride-trifluoroethylene) ferroelectrics is achieved. The detectivity and responsitivity are up to 2.2 x 10(12) Jones and 2570 A W-1, respectively, at 635 nm with ZERO gate bias. E-g of MoS2 is tuned by the ultra-high electrostatic field from the ferroelectric polarization. The photo response wavelengths of the photo detector are extended into the near-infrared (0.85-1.55 mu m).

引用

页码：6575 / +

页数：8

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